Double logarithmical corrections to beam asymmetry in polarized electron-proton scattering

The up-down asymmetry in transversally polarized electron proton scattering is induced by the interference between one and two photon exchange amplitudes. Inelastic intermediate hadronic states (different from one-proton state) of the two photon exchange amplitude give rise to contributions containing the square of "large logarithm" (logarithm of the ratio of the transferred momentum to the electron mass). We investigate the presence of such contributions in higher orders of perturbation theory. The relation with the case of zero transfer momentum is explicitly given. The mechanism of cancellation of infrared singularities is discussed.Comment: 9 pages, 8 figure

The Evidence for a Pentaquark Signal and Kinematic Reflections

Several recent experiments have reported evidence for a narrow baryon resonance with positive strangeness ($\Theta^+$) at a mass of 1.54 GeV/$c^2$. Baryons with $S=+1$ cannot be conventional $qqq$ states and the reports have thus generated much theoretical speculation about the nature of possible $S=+1$ baryons, including a 5-quark, or pentaquark, interpretation. We show that narrow enhancements in the $K^+n$ effective mass spectrum can be generated as kinematic reflections resulting from the decay of mesons, such as the $f_2(1275)$, the $a_2(1320)$ and the $\rho_3(1690)$.Comment: 4 pages, 4 figure

Multiplicity Distributions in Canonical and Microcanonical Statistical Ensembles

The aim of this paper is to introduce a new technique for calculation of observables, in particular multiplicity distributions, in various statistical ensembles at finite volume. The method is based on Fourier analysis of the grand canonical partition function. Taylor expansion of the generating function is used to separate contributions to the partition function in their power in volume. We employ Laplace's asymptotic expansion to show that any equilibrium distribution of multiplicity, charge, energy, etc. tends to a multivariate normal distribution in the thermodynamic limit. Gram-Charlier expansion allows additionally for calculation of finite volume corrections. Analytical formulas are presented for inclusion of resonance decay and finite acceptance effects directly into the system partition function. This paper consolidates and extends previously published results of current investigation into properties of statistical ensembles.Comment: 53 pages, 7 figure

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Ge and III-V semiconductors are potential high performance channel materials for future CMOS devices. In this work, we have studied At. Layer Deposition (ALD) of high-k dielec. layers on Ge and GaAs substrates. We focus at the effect of the oxidant (H2O, O3, O2, O2 plasma) during gate stack formation. GeO2, obtained by Ge oxidn. in O2 or O3, is a promising passivation layer. The germanium oxide thickness can be scaled down below 1 nm, but such thin layers contain Ge in oxidn. states lower than 4+. Still, elec. results indicate that small amts. of Ge in oxidn. states lower than 4+ are not detrimental for device performance. Partial intermixing was obsd. for high-k dielec. and GeO2 or GaAsOx, suggesting possible correlations in the ALD growth mechanisms on Ge and GaAs substrates. [on SciFinder (R)

Ключевые эффекты цифровизации и возможные потери

The key effects of digitalization and possible losses during its use have been considered. It has been shown, that digitalization expands the possibilities of information when translating it into a digital form of knowledge and high-quality updating of production. It has been proven, that digitalization is not an end in itself, but an auxiliary tool for the implementation of the economic strategy and industrial policy of the state, increasing production efficiency and should be assessed taking into account this indicator. The expediency of the practical use of digitalization in the number of effective tools for creating flexible industries, the transition to high-performance, industrial ecosystems and industrialization has been substantiated. The possible losses from digitalization while increasing the dependence of production on digital technologies and reducing the role of the human factor have been shown.Рассмотрены ключевые эффекты цифровизации и возможные потери при ее использовании. Показано, что цифровизация расширяет возможности информации при переводе ее в цифровую форму познания и качественного обновления производства. Доказано, что цифровизация является не самоцелью, а вспомогательным инструментом реализации экономической стратегии и промышленной политики государства, повышения эффективности производства и должна оцениваться с учетом данного показателя. Обоснована целесообразность практического использования цифровизации в числе эффективных инструментов создания гибких производств, перехода к высокоэффективным, производственным экосистемам и проведения индустриализации. Показаны возможные потери от цифровизации при повышении зависимости производства от цифровых технологий и снижении роли человеческого фактора

Re distribution of oxygen at the interface between gamma Al2O3 and TiN

AbstractInterface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiNxOy (≈1-nm thick) interlayer at the interface between γ-Al2O3 film and TiN electrode due to oxygen scavenging from γ-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4 nm)/TiNxOy(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al2O3 interface as compared to the TiN/γ-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.</jats:p