Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics

A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.Comment: in press, AIP proceedings for ICPS 2012 - 31st International Conference on the Physics of Semiconductors, July 29-August 3, 2012 Zuric

Pichia pastoris Fep1 is a [2Fe-2S] protein with a Zn finger that displays an unusual oxygen-dependent role in cluster binding

Fep1, the iron-responsive GATA factor from the methylotrophic yeast Pichia pastoris, has been characterised both in vivo and in vitro. This protein has two Cys(2)-Cys(2) type zinc fingers and a set of four conserved cysteines arranged in a Cys-X-5-Cys-X-8-Cys-X-2-Cys motif located between the two zinc fingers. Electronic absorption and resonance Raman spectroscopic analyses in anaerobic and aerobic conditions indicate that Fep1 binds iron in the form of a [2Fe-2S] cluster. Site-directed mutagenesis shows that replacement of the four cysteines with serine inactivates this transcriptional repressor. Unexpectedly, the inactive mutant is still able to bind a [2Fe-2S] cluster, employing two cysteine residues belonging to the first zinc finger. These two cysteine residues can act as alternative cluster ligands selectively in aerobically purified Fep1 wild type, suggesting that oxygen could play a role in Fep1 function by causing differential localization of the [Fe-S] cluster

Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties

III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.Comment: 8 pages, 6 figures; accepted for publication in IOP Nanotechnology journa

1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

We report on the growth and characterization of low threshold 1.32-μm quantum dots (QDs) laser diodes. The quantum dot active region was optimised to get the highest photoluminescence emission and the lowest Full Width at Half Maximum (FWHM). From samples containing multilayer QDs and using the Limited-Area Photoluminescence (LAPL) technique we have shown that the gain of an N-layer structure is higher than N times that of a single layer. This enhancement is attributed to the increase of the quantum dot density in the upper layers and also to the use of the high growth temperature spacer layer. Broad area laser diodes were processed from the grown samples containing three layers of InAs QDs grown directly on GaAs and capped with 4-nm-thick In x Ga 1-x As layer. Than measurements were performed at room temperature under pulsed excitation. The laser diodes operate at room temperature and emit between 1.29 and 1.32-μm which is beyond the strategic telecommunication wavelength. The characteristic temperature is around 80 K and very stable in the hole range of the operating temperature (from 0 to 90 °C). The internal quantum efficiency is 53% and the modal gain per QD layer was estimated to be ~ 6 cm -1 . For an infinite cavity length a threshold current density of 8 A/cm 2 per QD layer was obtained. From the calculation of the optical confinement of QDs, we have estimated a material gain of 1979 cm -1

Field Effect Transistor Based on a Modified DNA Base

In this work, a field effect transistor based on a deoxyguanosine derivative (a DNA base) is demonstrated. Our experiments on transport through the source and drain electrodes interconnected by self-assembled guanine ribbons (Gottarelli et al. Helv. Chim. Acta 1998, 81, 2078; Gottarelli et al. Chem. Eur. J. 2000, 6, 3242; Giorgi et al. Chem Eur. J. 2002, 8, 2143) suggest that these devices behave like p-channel MOSFETs, The devices exhibit a maximum voltage gain of 0.76. This prototype transistor represents a starting point toward the development of biomolecular electronic devices

Co-targeting triple-negative breast cancer cells and endothelial cells by metronomic chemotherapy inhibits cell regrowth and migration via downregulation of the FAK/VEGFR2/VEGF axis and autophagy/apoptosis activation

High-dose standard-of-care chemotherapy is the only option for triple-negative breast cancer (TNBC) patients, which eventually die due to metastatic tumors. Recently, metronomic chemotherapy (mCHT) showed advantages in treating TNBCs leading us to investigate the anti-metastatic and anti-angiogenic potential of metronomic 5-Fluorouracil plus Vinorelbine (5-FU+VNR) on endothelial cells (ECs) and TNBCs in comparison to standard treatment (STD). We found that 10-fold lower doses of 5-FU+VNR given mCHT vs. STD inhibits cell proliferation and survival of ECs and TNBC cells. Both schedules strongly affect ECs migration and invasion, but in TNBC cells mCHT is significantly more effective than STD in impairing cell migration and invasion. The two treatments disrupt FAK/VEGFR/VEGF signaling in both ECs and TNBC cells. mCHT, and to a much lesser extent STD treatment, induces apoptosis in ECs, whereas it switches the route of cell death from apoptosis (as induced by STD) to autophagy in TNBC cells. mCHT-treated TNBCs-derived conditioned medium also strongly affects ECs' migration, modulates different angiogenesis-associated proteins, and hampers angiogenesis in matrix sponge in vivo. In conclusion, mCHT administration of 5-FU+VNR is more effective than STD schedule in controlling cell proliferation/survival and migration/invasion of both ECs and TNBC cells and has a strong anti-angiogenic effect. Our data suggest that the stabilization of tumor growth observed in TNBC patients treated with mCHT therapy schedule is likely due not only to direct cytotoxic effects but also to anti-metastatic and anti-angiogenic effects

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier

Enhanced Performances of Quantum Dot Lasers Operating at 1.3 μ\mu m

Due to their delta-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm2 per QD layer and a modal gain of 6 cm-1 per QD layer were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50 degC) and high T 0 (110 K) from a single-mode device containing six QD layers