Photon assisted tunneling in pairs of silicon donors

Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons

The effect of short-term antiorthostatic hypokinesia on central and intracardiac hemodynamics and metabolism of a healthy person

The right parts of the heart and the radial artery were catheterized in healthy male volunteers before and 5 days after strict bedrest in antiorthostatic position of the body (-4.5 deg). After immobilization, most values of central circulation showed no essential changes; the only exceptions were indicates characterizing the inotropic myocardial condition. A shift in the direction of acidosis of a mixed character was noted in mixed venous blood, the beta lipoprotein content increased. A decrease in the arteriovenous difference in oxygen was encountered in blood draining from the heart (from the coronary sinus)

Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon

We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a specific hyperfine state by optically pumping donor bound exciton hyperfine transitions, which can be spectrally resolved in 28Si. Electron and nuclear polarizations of 90% and 76%, respectively, are obtained in less than a second, providing an initialization mechanism for qubits based on these spins, and enabling further ESR and NMR studies on dilute 31P in 28Si.Comment: 4 pages, 3 figure

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Crystal-melt interfacemorphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interfacemorphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.Xinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.

Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible

The growth of silicon crystals from a melt contained in a granulate crucible significantly differs from the classical growth techniques because of the granulate feedstock and the continuous growth process. We performed a systematic study of impurities and structural defects in several such crystals with diameters up to 60 mm. The possible origin of various defects is discussed and attributed to feedstock (concentration of transition metals), growth setup (carbon concentration), or growth process (dislocation density), showing the potential for further optimization. A distinct correlation between crystal defects and bulk carrier lifetime is observed. A bulk carrier lifetime with values up to 600 μs on passivated surfaces of dislocation-free parts of the crystal is currently achieved

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl