The risk of misclassifying subjects within principal component based asset index.

The asset index is often used as a measure of socioeconomic status in empirical research as an explanatory variable or to control confounding. Principal component analysis (PCA) is frequently used to create the asset index. We conducted a simulation study to explore how accurately the principal component based asset index reflects the study subjects' actual poverty level, when the actual poverty level is generated by a simple factor analytic model. In the simulation study using the PC-based asset index, only 1% to 4% of subjects preserved their real position in a quintile scale of assets; between 44% to 82% of subjects were misclassified into the wrong asset quintile. If the PC-based asset index explained less than 30% of the total variance in the component variables, then we consistently observed more than 50% misclassification across quintiles of the index. The frequency of misclassification suggests that the PC-based asset index may not provide a valid measure of poverty level and should be used cautiously as a measure of socioeconomic status

Investigating the impact of facebook use on cancer survivors' psychological well-being

Rapid growth of Social Network Sites (SNSs) use by cancer survivors makes it important to examine whether there is a relationship between the use of these online communities and cancer survivors' psychological well-being. This article poses the question of how the Facebook use as the most popular SNS, may impact cancer survivors' psychological well-being. To answer this question a comprehensive literature review of studies conducted in information systems and health disciplines has been undertaken and a theoretical model is proposed. This study is expected to contribute to the existing knowledge base through the development of a new theoretical model which introduces and explains the ways that SNS use may impact cancer survivors' psychological well-being. It provides important information on the health-related SNSs use and is envisioned to assist health care organizations and cancer survivors to use SNS as an e-health application. © (2013) by the AIS/ICIS Administrative Office All rights reserved

Infrared Detector Activities at NASA Langley Research Center

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter

Phototransistors Development and their Applications to Lidar

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively

Infrared Detectors Overview in the Short Wave Infrared to Far Infrared for CLARREO Mission

There exists a considerable interest in the broadband detectors for CLARREO Mission, which can be used to detect CO2, O3, H2O, CH4, and other gases. Detection of these species is critical for understanding the Earth?s atmosphere, atmospheric chemistry, and systemic force driving climatic changes. Discussions are focused on current and the most recent detectors developed in SWIR-to-Far infrared range for CLARREO space-based instrument to measure the above-mentioned species. These detector components will make instruments designed for these critical detections more efficient while reducing complexity and associated electronics and weight. We will review the on-going detector technology efforts in the SWIR to Far-IR regions at different organizations in this study

Progress of 2-micron Detectors for Application to Lidar Remote Sensing

AlGaAsSb/InGaAsSb heterojunction phototransistors were developed at Astropower, Inc under Laser Risk Reduction Program (LRRP) for operation in the 2-micron region. These phototransistors were optimized for 2-micron detection and have high quantum efficiency (>60%), high gain (>10(exp 3)) and low noise-equivalent- power (<5x10(exp -14) W/Hz), while operating at low bias voltage. One of these phototransistors was tested in lidar mode using the 2-micron CO2 Differential Absorption Lidar (DIAL) system currently under development under the Instrument Incubator Program (IIP) at NASA Langley. Lidar measurements included detecting atmospheric structures consisting of thin clouds in the mid-altitude and near-field boundary layer. These test results are very promising for the application of phototransistors for the two-micron lidar remote sensing. In addition, HgCdTe avalanche photodiodes (APD) acquired from Raytheon were used in atmospheric testing at 2-microns. A discussion of these measurements is also presented in this paper

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively

Calculations of the Temperature and Alloy Composition Effects on the Optical Properties of Alx Ga1-x Asy Sb1-y and Gax In1-x Asy Sb1-y in the Spectral Range 0.5-6 eV

A detailed analysis is presented on the temperature and alloy composition dependence of the optical properties of III-V alloys Alx Ga1-x Asy Sb1-y and Gax In1-x Asy Sb1-y in the energy range 0.5-6 eV. Expressions for the complex dielectric function are based on a semiempirical phenomenological model, which takes under consideration indirect and direct transitions below and above the fundamental absorption edge. Dielectric function and absorption coefficient calculations are in satisfactory agreement with available experimental data. Other dielectric related optical data, such as the refractive index, extinction, and reflection coefficients, can also be obtained from the model. © 2007 American Institute of Physics. (DOI: 10.1063/1.2751406

2.4 Micron Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave IR Applications

Shortwave infrared detectors are critical for several applications including remote sensing and optical communications. Several detectors are commercially available for this wavelength range, but they lack sufficient gain, which limits their detectivity. The characterization results of an AlGaAsSb/InGaAsSb phototransistor for shortwave IR application are reported. The phototransistor is grown using molecular beam epitaxy technique. Spectral response measurements showed a uniform responsivity between 1.2 and 2.4 micron region with a mean value of 1000 A/W. A maximum detectivity of 3.4 X 10(exp 11) cmHz1/2/W was obtained at 2 micron at -20 C and 1.3 V

InGaAsSb/AlGaAsSb Heterojunction Phototransistors for Infrared Applications

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm