Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga2 O3

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β-Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β-Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material's unique response to the incorporation of impurities that can critically influence their properties

The Association between Mental Health and Violence among a Nationally Representative Sample of College Students from the United States

Objectives Recent violent attacks on college campuses in the United States have sparked discussions regarding the prevalence of psychiatric disorders and the perpetration of violence among college students. While previous studies have examined the potential association between mental health problems and violent behavior, the overall pattern of findings flowing from this literature remain mixed and no previous studies have examined such associations among college students. Methods The current study makes use of a nationally representative sample of 3,929 college students from the National Epidemiologic Study on Alcohol and Related Conditions (NESARC) to examine the prevalence of seven violent behaviors and 19 psychiatric disorder diagnoses tapping mood, anxiety, personality, and substance use disorders. Associations between individual and composite psychiatric disorder diagnoses and violent behaviors were also examined. Additional analyses were adjusted for the comorbidity of multiple psychiatric diagnoses. Results The results revealed that college students were less likely to have engaged in violent behavior relative to the non-student sample, but a substantial portion of college students had engaged in violent behavior. Age- and sex-standardized prevalence rates indicated that more than 21% of college students reported at least one violent act. In addition, more than 36% of college students had at least one diagnosable psychiatric disorder. Finally, the prevalence of one or more psychiatric disorders significantly increased the odds of violent behavior within the college student sample. Conclusions These findings indicate that violence and psychiatric disorders are prevalent on college campuses in the United States, though perhaps less so than in the general population. In addition, college students who have diagnosable psychiatric disorders are significantly more likely to engage in various forms of violent behavior

Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs on an Fe-Doped beta-Ga2O3 Substrate

Threshold voltage instability was observed on beta-Ga2O3 transistors using double-pulsed current-voltage and constant drain current deep level transient spectroscopy (DLTS) measurements. A total instability of 0.78 V was attributed to two distinct trap levels, at E-C-0.70 and E-C-0.77 eV, which need to be mitigated for future applications. The traps are likely located near the gate-drain edge and below the delta-doped layer, which is determined through the DLTS technique and an understanding of the fill and empty biasing conditions. The trap modulation was consistent with a gate leakage-based trap filling mechanism, which was demonstrated. It is likely that Fe is playing a role in the observed dispersion due to the close proximity of the Fe substrate

Effect of buffer iron doping on delta-doped beta-Ga2O3 metal semiconductor field effect transistors

We report on the effect of iron (Fe)-doped semi-insulating buffers on the electron transport and DC-RF dispersion in Si delta (delta)-doped beta-Ga2O3 metal-semiconductor field effect transistors. The effect of the distance between the 2-dimensional electron gas and the Fe-doped region was investigated, and Fe doping in the buffer was found to have a significant effect on the transport properties. It was found that buffers thicker than 600 nm can enable better transport and dispersion properties for field effect transistors, while maintaining relatively low parasitic buffer leakage. This work can provide guidance for the use of Fe-doped insulating buffers for future Ga2O3 based electronics. Published by AIP Publishing

Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β-Ga2 O3

Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β-Ga2O3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β-Ga2O3. This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material's unique response to the incorporation of impurities that can critically influence their properties