Pinning of polymers and interfaces by random potentials

We consider a polymer, with monomer locations modeled by the trajectory of a Markov chain, in the presence of a potential that interacts with the polymer when it visits a particular site 0. Disorder is introduced by, for example, having the interaction vary from one monomer to another, as a constant $u$ plus i.i.d. mean-0 randomness. There is a critical value of $u$ above which the polymer is pinned, placing a positive fraction of its monomers at 0 with high probability. This critical point may differ for the quenched, annealed and deterministic cases. We show that self-averaging occurs, meaning that the quenched free energy and critical point are nonrandom, off a null set. We evaluate the critical point for a deterministic interaction ($u$ without added randomness) and establish our main result that the critical point in the quenched case is strictly smaller. We show that, for every fixed $u\in\mathbb{R}$, pinning occurs at sufficiently low temperatures. If the excursion length distribution has polynomial tails and the interaction does not have a finite exponential moment, then pinning occurs for all $u\in\mathbb{R}$ at arbitrary temperature. Our results apply to other mathematically similar situations as well, such as a directed polymer that interacts with a random potential located in a one-dimensional defect, or an interface in two dimensions interacting with a random potential along a wall.Comment: Published at http://dx.doi.org/10.1214/105051606000000015 in the Annals of Applied Probability (http://www.imstat.org/aap/) by the Institute of Mathematical Statistics (http://www.imstat.org

Subgaussian concentration and rates of convergence in directed polymers

We consider directed random polymers in (d+1) dimensions with nearly gamma i.i.d. disorder. We study the partition function ZN,ω and establish exponential concentration of log ZN,ω about its mean on the subgaussian scale √N/log N . This is used to show that E[log ZN,ω] differs from N times the free energy by an amount which is also subgaussian (i.e. o(√N)), specifically O(√N/logN log log N)

Layering and wetting transitions for an SOS interface

We study the solid-on-solid interface model above a horizontal wall in three dimensional space, with an attractive interaction when the interface is in contact with the wall, at low temperatures. There is no bulk external field. The system presents a sequence of layering transitions, whose levels increase with the temperature, before reaching the wetting transition.Comment: 61 pages, 6 figures. Miscellaneous corrections and changes, primarily in Section 4. Figure 5 added