Low temperature electronic properties of Sr_2RuO_4 II: Superconductivity

The body centered tetragonal structure of Sr_2RuO_4 gives rise to umklapp scattering enhanced inter-plane pair correlations in the d_{yz} and d_{zx} orbitals. Based on symmetry arguments, Hund's rule coupling, and a bosonized description of the in-plane electron correlations the superconducting order parameter is found to be a orbital-singlet spin-triplet with two spatial components. The spatial anisotropy is 7%. The different components of the order parameter give rise to two-dimensional gapless fluctuations. The phase transition is of third order. The temperature dependence of the pair density, specific heat, NQR, Knight shift, and susceptibility are in agreement with experimental results.Comment: 20 pages REVTEX, 3 figure

Multiband tight-binding theory of disordered ABC semiconductor quantum dots: Application to the optical properties of alloyed CdZnSe nanocrystals

Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC can be realized by alloying of two pure compound semiconductor materials AC and BC, which allows for a continuous tuning of their absorption and emission spectrum with the concentration x. We use the single-particle energies and wave functions calculated from a multiband sp^3 empirical tight-binding model in combination with the configuration interaction scheme to calculate the optical properties of CdZnSe nanocrystals with a spherical shape. In contrast to common mean-field approaches like the virtual crystal approximation (VCA), we treat the disorder on a microscopic level by taking into account a finite number of realizations for each size and concentration. We then compare the results for the optical properties with recent experimental data and calculate the optical bowing coefficient for further sizes

Initial Results of the S3-Humerus Plate

Fractures of the humeral head account for 5% of all fractures and incidence increases with age. Depending on fracture form and patients age a wide variety of therapeutical options exist. Stable fractures can be treated conservatively, while the majority of unstable and displaced fractures require surgical treatment. Many different surgical options are available; open reduction and internal fixation are widely preferred. The S3 Proximal Humerus Plate is a contoured plate to match the complex shape of the proximal humerus. It is designed to be positioned distal to the greater tuberosity preventing subacromial impingement

Quantum-fluctuation-induced collisions and subsequent excitation gap of an elastic string between walls

An elastic string embedded between rigid walls is simulated by means of the density-matrix renormalization group. The string collides against the walls owing to the quantum-mechanical zero-point fluctuations. Such ``quantum entropic'' interaction has come under thorough theoretical investigation in the context of the stripe phase observed experimentally in doped cuprates. We found that the excitation gap opens in the form of exponential singularity DeltaE ~ exp(-Ad^sigma) (d: wall spacing) with the exponent sigma =0.6(3), which is substantially smaller than the meanfield value sigma=2. That is, the excitation gap is much larger than that anticipated from meanfield, suggesting that the string is subjected to robust pinning potential due to the quantum collisions. This feature supports Zaanen's ``order out of disorder'' mechanism which would be responsible to the stabilization of the stripe phase

Doping and temperature dependence of incommensurate antiferromagnetism in underdoped lanthanum cuprates

The doping, temperature and energy dependence of the dynamical spin structure factors of the underdoped lanthanum cuprates in the normal state is studied within the t-J model using the fermion-spin transformation technique. Incommensurate peaks are found at $[(1\pm\delta)\pi,\pi]$, $[\pi,(1\pm\delta)\pi]$ at relatively low temperatures with $\delta$ linearly increasing with doping at the beginning and then saturating at higher dopings. These peaks broaden and weaken in amplitude with temperature and energy, in good agreement with experiments. The theory also predicts a rotation of these peaks by $\pi/4$ at even higher temperatures, being shifted to $[(1\pm \delta/\sqrt{2})\pi,(1\pm \delta/\sqrt{2})\pi]$.Comment: 11 pages, PDF file, six figures are included, accepted for publication in Physical Review

Low temperature electronic properties of Sr_2RuO_4 I: Microscopic model and normal state properties

Starting from the quasi one-dimensional kinetic energy of the d_{yz} and d_{zx} bands we derive a bosonized description of the correlated electron system in Sr_2RuO_4. At intermediate coupling the magnetic correlations have a quasi one-dimensional component along the diagonals of the basal plane of the tetragonal unit cell that accounts for the observed neutron scattering results. Together with two-dimensional correlations the model consistently accounts for the normal phase specific heat, cyclotron mass enhancement, static susceptibility, and Wilson ratio and implies an anomalous high temperature resistivity.Comment: 12 pages REVTEX, 6 figure

Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates

It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials. These phenomena include boron implantation in preamorphized silicon, a "hot" implantation of indium ions, annealing of ion-implanted layers et cetera. In particular, to verify this microscopic mechanism, a simulation of boron redistribution during low-temperature annealing of ion-implanted layers has been carried out under different conditions of transient enhanced diffusion suppression. Due to the good agreement with the experimental data, the values of the average migration length of nonequilibrium impurity interstitials have been obtained. It has been shown that for boron implanted into a silicon layer preamorphized by germanium ions the average migration length of impurity interstitials at the annealing temperature of 800 Celsius degrees be reduced from 11 nm to approximately 6 nm due to additional implantation of nitrogen. The further shortening of the average migration length is observed if the processing temperature is reduced to 750 Celsius degrees. It is also found that for implantation of BF2 ions into silicon crystal, the value of the average migration length of boron interstitials is equal to 7.2 nm for thermal treatment at a temperature of 800 Celsius degrees.Comment: 10 pages, 6 figures, RevTe

Optimum electrode configurations for fast ion separation in microfabricated surface ion traps

For many quantum information implementations with trapped ions, effective shuttling operations are important. Here we discuss the efficient separation and recombination of ions in surface ion trap geometries. The maximum speed of separation and recombination of trapped ions for adiabatic shuttling operations depends on the secular frequencies the trapped ion experiences in the process. Higher secular frequencies during the transportation processes can be achieved by optimising trap geometries. We show how two different arrangements of segmented static potential electrodes in surface ion traps can be optimised for fast ion separation or recombination processes. We also solve the equations of motion for the ion dynamics during the separation process and illustrate important considerations that need to be taken into account to make the process adiabatic

Gaussian Tunneling Model of c-Axis Twist Josephson Junctions

We calculate the critical current density $J^J_c$ for c-axis Josephson tunneling between identical high temperature superconductors twisted an angle $\phi_0$ about the c-axis. We model the tunneling matrix element squared as a Gaussian in the change of wavevector q parallel to the junction, $<|t({\bf q})|^2>\propto\exp(-{\bf q}^2a^2/2\pi^2\sigma^2)$. The $J^J_c(\phi_0)/J^J_c(0)$ obtained for the s- and extended-s-wave order parameters (OP's) are consistent with the Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ data of Li {\it et al.}, but only for strongly incoherent tunneling, $\sigma^2\ge0.25$. A $d_{x^2-y^2}$-wave OP is always inconsistent with the data. In addition, we show that the apparent conventional sum rule violation observed by Basov et al. might be understandable in terms of incoherent c-axis tunneling, provided that the OP is not $d_{x^2-y^2}$-wave.Comment: 6 pages, 6 figure

Flux Phase as a Dynamic Jahn-Teller Phase: Berryonic Matter in the Cuprates?

There is considerable evidence for some form of charge ordering on the hole-doped stripes in the cuprates, mainly associated with the low-temperature tetragonal phase, but with some evidence for either charge density waves or a flux phase, which is a form of dynamic charge-density wave. These three states form a pseudospin triplet, demonstrating a close connection with the E X e dynamic Jahn-Teller effect, suggesting that the cuprates constitute a form of Berryonic matter. This in turn suggests a new model for the dynamic Jahn-Teller effect as a form of flux phase. A simple model of the Cu-O bond stretching phonons allows an estimate of electron-phonon coupling for these modes, explaining why the half breathing mode softens so much more than the full oxygen breathing mode. The anomalous properties of $O^{2-}$ provide a coupling (correlated hopping) which acts to stabilize density wave phases.Comment: Major Revisions: includes comparisons with specific cuprate phonon modes, 16 eps figures, revte