Terrace Review, May, 28, 1986

Thrombosis and Hemostasi

Structural Study of CoSi2/Si (001) and (111)

Nucleation and growth of CoSi2 films by thermal reaction of vapour deposited Co on (001) and (111) Si have been studied by transmission electron microscopy (TEM). On (001) Si, CoSi2 occurs in a number of orientations including the aligned (001) orientation. On (111) Si single crystalline layers are obtained, which are twin-oriented. In addition Si/CoSi2/Si structures have been formed by high-dose implantation of Co into (001) and (111) Si and subsequent annealing. In this way single crystalline ‘mesotaxial’ CoSi2 layers are obtained which are fully aligned with the Si-matrix. Epitaxial growth of CoSi2 on Si by conventional techniques (evaporation) and by high energy Co implantation is discussed

Microstructure of heteroepitaxial silicon/cobalt disilicide/silicon formed by cobalt implantation into (100) and (111) silicon

Heteroepitaxial Si/CoSi2/Si structures have been synthesized by high-dose implantation of Co into (100) and (111) Si at an energy of 170 keV and subsequent annealing. In the as-implanted state the implanted Co is found to be present as CoSi2. For a dose of 2×1017 Co/cm2, the Co is present in the form of epitaxial precipitates, which exhibit both the aligned (A-type) CoSi2 and twinned (B-type) orientation. For a higher dose of 3×1017 Co/cm2, a monocrystalline epitaxial CoSi2 layer near the top of the implanted Co distribution is formed during the implantation. The heteroepitaxial structures that are formed in this way are fully aligned. In contrast, when these structures are formed by sequential surface deposition techniques, twinning occurs at every Si/CoSi2 interface. The formation of the aligned orientation of the buried CoSi2 layer can be attributed to the larger stability of aligned precipitates as compared to twin-oriented precipitates

A high proportion of novel mutations in BRCA1 with strong founder effects among Dutch and Belgian hereditary breast and ovarian cancer families

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