Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation

Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3554

Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation

Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3554