Hole Spin Mixing in InAs Quantum Dot Molecules

Holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have only heavy-hole character and further assumed to have no mixing between orthogonal heavy hole spin projections (in the absence of a transverse magnetic field). The same assumption has been applied to InAs quantum dot molecules formed by two stacked InAs quantum dots that are coupled by coherent tunneling of the hole between the two dots. We present experimental evidence of the existence of a hole spin mixing term obtained with magneto-photoluminescence spectroscopy on such InAs quantum dot molecules. We use a Luttinger spinor model to explain the physical origin of this hole spin mixing term: misalignment of the dots along the stacking direction breaks the angular symmetry and allows mixing through the light-hole component of the spinor. We discuss how this novel spin mixing mechanism may offer new spin manipulation opportunities that are unique to holes.Comment: 13 pages, 9 figure

Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs

We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.Comment: 4 pages, 5 figures, (v2, revision based on reviewers comments, published

Fast spin rotations by optically controlled geometric phases in a quantum dot

We demonstrate optical control of the geometric phase acquired by one of the spin states of an electron confined in a charge-tunable InAs quantum dot via cyclic 2pi excitations of an optical transition in the dot. In the presence of a constant in-plane magnetic field, these optically induced geometric phases result in the effective rotation of the spin about the magnetic field axis and manifest as phase shifts in the spin quantum beat signal generated by two time-delayed circularly polarized optical pulses. The geometric phases generated in this manner more generally perform the role of a spin phase gate, proving potentially useful for quantum information applications.Comment: 4 pages, 3 figures, resubmitted to Physical Review Letter

Electrically tunable g-factors in quantum dot molecular spin states

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.Comment: 5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comment

Spin Fine Structure in Optically Excited Quantum Dot Molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.Comment: 10 pages, 7 figures, added material, (published

Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well

We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under resonant excitation of neutral heavy-hole excitons, the polarization of excitons and trions increases dramatically with electrical injection of electrons within the narrow exciton-trion bias transition in the PL spectra, implying a polarization sensitivity of 200 % per Volt. This effect results from a very efficient trapping of neutral excitons by the quantum well interfacial fluctuations (so-called "natural" quantum dots) containing resident electrons.Comment: 18 pages, 4 figure

Controlling the nuclear polarization in quantum dots using optical pulses with a modest bandwidth

We show that detuned optical pulse trains with a modest spectral width can polarize nuclear spins in InAs quantum dots. The pulse bandwidth is large enough to excite a coherent superposition of both electron spin eigenstates in these negatively charged dots but narrow enough to give partial spectral selectivity between the eigenstates. The coherent precession of electron spin states and periodic excitation focuses the nuclear spin distribution, producing a discrete set of precession modes. The spectral selectivity generates a net nuclear polarization, through a mechanism that relies on optical spin rotations rather than electron spin relaxation.Comment: 7 pages, 7 figure