The Device for Dynamic Matching of the E-type Discharge Plasma System and Output Tract of Electric Pulses Generator

To reduce the reactivity of a glow pulse discharge, the device for stepwise matching of the communica-tion channel of the power stage of electric pulses generator exciting plasma and the plasma discharge as a dynamic load was developed and tested. The peculiarity of this device is the use of a wide range soft-ware-controlled inductive element. The use of mixed analog and digital units circuitry provides stable regulation of inductance from 600 μH to 20 mH. Experimental testing of the device with the E-type dis-charge system at frequencies from 5 kHz to 60 kHz showed a decrease of the phase shift between the current pulses and the discharge voltage and the reduction of the spurious emissions on power pulses tra-jectories. It makes possible to increase the energy efficiency of plasma process and reliability of the op-eration of pulse generator with plasma as a load

Effect of thickness on the piezoelectric properties of LiNbO3 films

The results were obtained using the equipment of Research and Education Center and the Center of collective use “Nanotechnology” of Southern Federal University

ОПТИЧЕСКИЕ ХАРАКТЕРИСТИКИ ТОНКИХ ПЛЕНОК ДИОКСИДА КРЕМНИЯ, ПОЛУЧЕННЫХ ПРЯМЫМ ОСАЖДЕНИЕМ ИЗ ИОННЫХ ПУЧКОВ

Influence of fractional pressure of monosilane and argon intermixture and substrate temperature on optical performances of thin-film coatings from the silicon dioxide, received by direct deposition from ion beams on substrates from a glass and silicon with use of the end Hall accelerator as a ion source is investigated. It is positioned, that the magnification of fractional pressure of monosilane and argon intermixture of results in to growth of deposition rate and a refractivity and decrease in an optical transmission of coatings. Rise in substrate temperature promoted improvement of optical performances of silicon dioxide layers that explains magnification of adatoms mobility and chemical interaction boost between silicon and oxygen.Исследовано влияние парциального давления смеси моносилана и аргона и температуры подложки на оптические характеристики тонкопленочных покрытий из диоксида кремния, полученных прямым осаждением из ионных пучков на подложках из стекла и кремния с использованием торцевого холловского ускорителя в качестве источника ионов. Установлено, что увеличение парциального давления смеси моносилана и аргона приводит к росту скорости нанесения и коэффициента преломления и снижению оптического пропускания покрытий. Повышение температуры подложки способствовало улучшению оптических характеристик слоев диоксида кремния, что объясняется увеличением подвижности адатомов и стимулированием химического взаимодействия между кремнием и кислородом

ИССЛЕДОВАНИЕ ОПТИЧЕСКИХ ХАРАКТЕРИСТИК СЛОЕВ AlN, ПОЛУЧЕННЫХ МЕТОДАМИ РЕАКТИВНОГО МАГНЕТРОННОГО И ИОННО-ЛУЧЕВОГО РАСПЫЛЕНИЯ

This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive magnetron and ion-beam sputtering. The dependences of the refractive index and absorption coefficient of the films on the percentage of nitrogen in the working gas mixture have been obtained. It was found that reactive magnetron sputtering allows the formation of AlN layers with a lower absorption coefficient than by reactive ion beam sputtering and with a refractive index close to the value appropriate of the bulk material.Исследованы оптические характеристики тонких пленок нитрида алюминия, нанесенных методами реактивного магнетронного и реактивного ионно-лучевого распыления. Установлены зависимости показателя преломления и коэффициента поглощения пленок от процентного содержания азота в смеси рабочих газов. Выявлено, что метод реактивного магнетронного распыления позволяет наносить слои нитрида алюминия с более низким коэффициентом поглощения, чем метод реактивного ионно-лучевого распыления и с коэффициентом преломления близким к значению объемного образца

ETT department to national economy

Представлены основные этапы развития кафедры ЭТТ, ее научные и производственные достижения, роль и место в подготовке специалистов с высшим образованием и специали- стов высшей научной квалификации

OPTICAL PERFORMANCES OF SILICON DIOXIDE THIN FILMS RECEIVED BY DIRECT DEPOSITION FROM ION BEAMS

Influence of fractional pressure of monosilane and argon intermixture and substrate temperature on optical performances of thin-film coatings from the silicon dioxide, received by direct deposition from ion beams on substrates from a glass and silicon with use of the end Hall accelerator as a ion source is investigated. It is positioned, that the magnification of fractional pressure of monosilane and argon intermixture of results in to growth of deposition rate and a refractivity and decrease in an optical transmission of coatings. Rise in substrate temperature promoted improvement of optical performances of silicon dioxide layers that explains magnification of adatoms mobility and chemical interaction boost between silicon and oxygen

Investigation of microwave energy distribution character in a resonator type plasmatron

An investigation of microwave energy distribution character in a plasma of microwave discharge inside a plasmatron based on a rectangular resonator has been carried out. The experiments were done applying the "active probe" method. Microwave discharge was excited in the air and oxygen. Ithasbeenfoundoutthatthereadingsofthe"activeprobe"alongthedischargechamberareofperiodic character. The readings of the "active probe" and data on the local electric conductivity of plasma obtained using electrical probes have been compared

Formation of "black silicon" on a surface of Ni/Si structure by Nd:YAG laser radiation

We have shown the possibility to form a new type of material known as "black silicon". After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm2 the "black silicon" was formed. The formation and self-organization of conelike microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a "black body" absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses

The DEVICE for DYNAMIC matching OF gas GLOW DISCHARGE PLASMA system AND output tract of Electric Pulse Generator

To reduce the reactivity of a glow pulse discharge, the device for stepwise matching of the communication channel of the power stage of electric pulses generator for exciting plasma and the plasma discharge as a dynamic load was developed and tested. The peculiarity of this device is the usage of a wide range software-controlled inductive element. The using of mixed analog and digital units circuitry provides stable regulation of inductance from 600 μH to 20 mH. Experimental testing of the device with the E-type and hollow cathode discharge systems at frequencies from 20 kHz to 60 kHz showed a decrease of the phase shift between the current and the discharge voltage pulses and the reduction of the spurious emissions on power pulses trajectories. It makes possible to increase the energy efficiency of plasma process and reliability of the operation of pulse generator with plasma as a load during plasma assisted process of sterilizing medical tools

Power IGBT modules and features of application in pulse sources of power supplies

Дано общее представление о структуре IGBT транзистора, его частотных свойствах, рассмотрен процесс включения силового модуля, рассмотрены особенности параллельного включения транзисторов, двухтактных мостовых и полумостовых схем преобразователей.The general representation about structure IGBT of the transistor and its frequency properties is given. Process of inclusion of the power module, feature of management by transistors in duple bridge schemes of converters is considered