918 research outputs found

    Multivalued current-phase relationship in a.c. Josephson effect for a three-dimensional Weyl semimetal WTe2_2

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    We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe2_2 crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in long 5~ÎĽ\mum In-WTe2_2-In junctions, as confirmed by the observation of integer (1,2,3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. Demonstration of fractional a.c. Josephson effect indicates multivalued character of the current-phase relationship, which we connect with Weyl topological surface states contribution to Josephson current. In contrast to topological insulators and Dirac semimetals, we do not observe 4Ď€4\pi periodicity in a.c. Josephson effect for WTe2_2 at different frequencies and power, which might reflect chiral character of the Fermi arc surface states in Weyl semimetal.Comment: the text is seriously corrected. arXiv admin note: text overlap with arXiv:1801.0955

    Signature of Fermi arc surface states in Andreev reflection at the WTe2_2 Weyl semimetal surface

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    We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe2_2 Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe2_2 interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states.Comment: 5 pages, some misprints has been correcte

    Signature of Fermi arc surface states in Andreev reflection at the WTe2_2 Weyl semimetal surface

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    We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe2_2 Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe2_2 interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states.Comment: 5 pages, some misprints has been correcte

    Diffusion doping route to plasmonic Si/SiOx nanoparticles

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    International audienceSemiconductor nanoparticles (SNPs) are a valuable building block for functional materials. Capabilities for engineering of electronic structure of SNPs can be further improved with development of techniques of doping by diffusion, as post-synthetic introduction of impurities does not affect the nucleation and growth of SNPs. Diffusion of dopants from an external source also potentially allows for temporal control of radial distribution of impurities. In this paper we report on the doping of Si/SiOx SNPs by annealing particles in gaseous phosphorus. The technique can provide efficient incorporation of impurities, controllable with precursor vapor pressure. HRTEM and X-ray diffraction studies confirmed that obtained particles retain their nanocrystallinity. Elemental analysis revealed doping levels up to 10%. Electrical activity of the impurity was confirmed through thermopower measurements and observation of localized surface plasmon resonance in IR spectra. The plasmonic behavior of etched particles and EDX elemental mapping suggest uniform distribution of phosphorus in the crystalline silicon cores. Impurity activation efficiencies up to 34% were achieved, which indicate high electrical activity of thermodynamically soluble phosphorus in oxide-terminated nanosilicon
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