Unsupervised Spike Sorting for Large-Scale, High-Density Multielectrode Arrays

We present a method for automated spike sorting for recordings with high-density, large-scale multielectrode arrays. Exploiting the dense sampling of single neurons by multiple electrodes, an efficient, low-dimensional representation of detected spikes consisting of estimated spatial spike locations and dominant spike shape features is exploited for fast and reliable clustering into single units. Millions of events can be sorted in minutes, and the method is parallelized and scales better than quadratically with the number of detected spikes. Performance is demonstrated using recordings with a 4,096-channel array and validated using anatomical imaging, optogenetic stimulation, and model-based quality control. A comparison with semi-automated, shape-based spike sorting exposes significant limitations of conventional methods. Our approach demonstrates that it is feasible to reliably isolate the activity of up to thousands of neurons and that dense, multi-channel probes substantially aid reliable spike sorting

Amorphous silicon solar cells deposited with non-constant silane concentration

The performance and light-soaking behavior of hydrogenated amorphous silicon (a-Si:H) solar cells with absorber layers deposited under non-constant silane concentration (SC) - a measure of silane dilution in hydrogen - using plasma enhanced chemical vapor deposition (PECVD) are investigated. Constant SC values during deposition close to the amorphous to microcrystalline phase transition lead to the formation of crystallites after a certain thickness. To prevent this transition, SC is adjusted during growth to produce an amorphous material that is close to the microcrystalline phase transition without the inclusion of a detectable microcrystalline phase. By adjusting SC during deposition it was possible to achieve an increased open-circuit voltage that is up to 40 mV higher than that for a conventional amorphous silicon solar cell at initial efficiencies above 9%. The best solar cells produced with non-constant SC show improved stability against light induced degradation, which leads to a relative loss in fill factor of only 11.4%, resulting in a stabilized fill factor of 62.5%. (C) 2010 Elsevier B.V. All rights reserved

Interplay between crystallinity profiles and the performance of microcrystalline thin-film silicon solar cells studied by in-situ Raman spectroscopy

The intrinsic microcrystalline absorber layer growth in thin-filmsilicon solar-cells is investigated by in-situ Raman spectroscopy during plasma enhanced chemical vapor deposition. In-situ Raman spectroscopy enables a detailed study of the correlation between the process settings, the evolution of the Raman crystallinity in growth direction, and the photovoltaic parameters η(solar cell conversion efficiency), JSC (short circuit current density), FF (fill factor), and VOC (open circuit voltage). Raman spectra were taken every 7 nm of the absorber layer growth depending on the process settings. The Raman crystallinity of growing microcrystalline silicon was determined with an absolute error of approximately ±5% for total absorber layer thicknesses >50 nm. Due to this high accuracy, inherent drifts of the Raman crystallinity profiles are resolvable for almost the entire absorber layer deposition. For constant process settings and optimized solar celldevice efficiency Raman crystallinity increases during the absorber layer growth. To compensate the inhomogeneous absorber layer growth process settings were adjusted. As a result, absorber layers with a constant Raman crystallinity profile — as observed in-situ — were deposited.Solar cells with those absorber layers show a strongly enhanced conversion efficiency by ∼0.5% absolute. However, the highest FF, VOC, and JSC were detected for solar cells with different Raman crystallinity profiles. In particular, fill factors of 74.5% were observed for solar cells with decreasing Raman crystallinity during the later absorber layer growth. In contrast, intrinsic layers with favorable JSC are obtained for constant and increasing Raman crystallinity profiles. Therefore, monitoring the evolution of the Raman crystallinity in-situ provides sufficient information for an optimization of the photovoltaic parameters with surpassing depth resolution

Interplay between crystallinity profiles and the performance of microcrystalline thin-film silicon solar cells studied by in-situ Raman spectroscopy

The intrinsic microcrystalline absorber layer growth in thin-filmsilicon solar-cells is investigated by in-situ Raman spectroscopy during plasma enhanced chemical vapor deposition. In-situ Raman spectroscopy enables a detailed study of the correlation between the process settings, the evolution of the Raman crystallinity in growth direction, and the photovoltaic parameters η(solar cell conversion efficiency), JSC (short circuit current density), FF (fill factor), and VOC (open circuit voltage). Raman spectra were taken every 7 nm of the absorber layer growth depending on the process settings. The Raman crystallinity of growing microcrystalline silicon was determined with an absolute error of approximately ±5% for total absorber layer thicknesses >50 nm. Due to this high accuracy, inherent drifts of the Raman crystallinity profiles are resolvable for almost the entire absorber layer deposition. For constant process settings and optimized solar celldevice efficiency Raman crystallinity increases during the absorber layer growth. To compensate the inhomogeneous absorber layer growth process settings were adjusted. As a result, absorber layers with a constant Raman crystallinity profile — as observed in-situ — were deposited.Solar cells with those absorber layers show a strongly enhanced conversion efficiency by ∼0.5% absolute. However, the highest FF, VOC, and JSC were detected for solar cells with different Raman crystallinity profiles. In particular, fill factors of 74.5% were observed for solar cells with decreasing Raman crystallinity during the later absorber layer growth. In contrast, intrinsic layers with favorable JSC are obtained for constant and increasing Raman crystallinity profiles. Therefore, monitoring the evolution of the Raman crystallinity in-situ provides sufficient information for an optimization of the photovoltaic parameters with surpassing depth resolution

Monitoring of the growth of microcrystalline silicon by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy

Peptic and chymotryptic peptides were isolated form the NADP-specific glutamate dehydrogenase of Neurospora crassa and substantially sequenced. Out of 452 residues in the polypeptide chain, 265 were recovered in the peptic and 427 in the chymotryptic peptides. Together with the tryptic peptides [Wootton, J. C., Taylor, J. G., Jackson, A. A., Chambers, G. K. & Fincham, J. R. S. (1975) Biochem. J. 149, 749-755], these establish the complete sequence of the chain, including the acid and amide assignments, except for seven places where overlaps are inadequate. These remaining alignments are deduced from information on the CNBr fragments obtained in another laboratory [Blumenthal, K. M., Moon, K. & Smith, E. L. (1975), J. Biol. Chem. 250, 3644-3654]. Further information has been deposited as Supplementary Publication SUP 50054 (17 pages) with the British Library (Lending Division), Boston Spa, Wetherby, W. Yorkshire LS23 7BQ, U.K., from whom copies may be obtained under the terms given in Biochem. J. (1975) 145, 5

In Situ Current Determination of a-Si/μc-Si Tandem Solar Cells via Transmission Measurements During Silicon PECVD

In situ optical transmission measurements performed during thin-film silicon plasma-enhanced chemical vapor deposition (PECVD) are presented. Hereto, the plasma emission was used as light source. With this setup information about thickness, crystallinity and absorption characteristic of the growing intrinsic silicon thin film can be obtained. By integrating the intrinsic layers in solar cells with p-i-n configuration, the layer information gained in situ during the PECVD process can be directly correlated to the generated short-circuit current of the solar cell. The intention of this paper is to show that, by using these transmission measurements for the estimation of solar cell currents, an in situ current matching of stacked a-Si/μc-Si tandem devices is possible, which is a useful extension of the process control techniques

In-situ transmission measurements as process control for thin-film silicon solar cells

In this work, in-situ transmission measurements using plasma as light source are presented for the determination of growth rate and crystallinity during silicon thin-film growth. The intensity of distinct plasma emission lines was measured at the backside of the transparent substrates on which silicon films, ranging from amorphous to microcrystalline, were deposited. Using this configuration, the growth rate of thin-films was determined with high accuracy. In addition, we show that the crystallinity of the films can be monitored in the most critical range (between 40% and 80%) for microcrystalline silicon solar cells by evaluating the intensity ratio of two transmitted wavelengths in-situ. The gradual change in the absorption behaviour of the films during the phase transition is reflected by this ratio of two wavelengths as demonstrated by the good correlation with the crystallinity fraction determined by ex-situ Raman spectroscopy. This approach of in-situ transmission spectroscopy provides an easy-to-implement monitoring and control system for the industrial deposition of thin-film silicon solar cells, as critical material properties can be determined real-time during the deposition process even on rough substrates that are optimized for light trapping in solar cells. (C) 2011 Elsevier B.V. All rights reserved