CaCu_3Ti_4O_12/CaTiO_3 Composite Dielectrics: A Ba/Pb-free Ceramics with High Dielectric Constants

We have measured dielectric properties of Ca$_{1+x}$Cu$_{3-x}$Ti$_4$O$_{12}$ ($x$ = 0, 0.1, 0.5, 1, 1.5, 2, 2.9 and 3), and have found that Ca$_2$Cu$_2$Ti$_4$O$_{12}$ (a composite of CaCu$_3$Ti$_4$O$_{12}$ and CaTiO$_3$) exhibits a high dielectric constant of 1800 with a low dissipation factor of 0.02 below 100 kHz from 220 to 300 K. These are comparable to (or even better than) those of the Pb/Ba-based ceramics, which could be attributed to a barrier layer of CaTiO$_3$ on the surface of the CaCu$_3$Ti$_4$O$_{12}$ grains. The composite dielectric ceramics reported here are environmentally benign as they do not contain Ba/Pb.Comment: 4 pages, 4 figures, Appl. Phys. Lett. (scheduled on July 25, 2005

Magnetic properties of HO2 thin films

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P ~= 10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5 <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.Comment: 1

Interatomic potentials for the vibrational properties of III-V semiconductor nanostructures

We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest neighbors, a three body term and a long-range Coulomb interaction. The optimized potential parameters are obtained by (i) fitting to bulk phonon dispersions and elastic properties and (ii) constraining the parameter space to deliver well behaved potentials for the structural relaxation and vibrational properties of nanostructure clusters. The targets are thereby calculated by density functional theory for clusters of up to 633 atoms. We illustrate the new capability by the calculation Kleinman and Gr\"uneisen parameters and of the vibrational properties of nanostructures with 3 to 5.5 nm diameter.Comment: 22 pages, 5 figures; Phys. Rev. B 201

Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons

We calculate the P-shell--to-S-shell decay lifetime \tau(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of \tau(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes \tau(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.Comment: Version published in Phys. Rev.

Self-consistent model for ambipolar tunneling in quantum-well systems

We present a self-consistent approach to describe ambipolar tunneling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunneling from a near-surface quantum well to surface states. The results of the model compare very well with the behavior observed in photoluminescence experiments in $InGaAs/InP$ asymmetric double quantum wells and in near-surface $AlGaAs/GaAs$ single quantum wells.Comment: 10 pages, REVTeX 3.

Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress

Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that: i) for layers in epitaxy on (100)Si), B segregation decreases with increasing Ge concentration, i.e. with increased compressive stress, ii) for unstressed layers, B segregation increases with Ge concentration, iii) at constant Ge concentration, B segregation increases for layers in tension and decreases for layers in compression. The contrasting behaviors observed as a function of Ge concentration in compressively stressed and unstressed layers can be explained by an increase of the equilibrium segregation driving force induced by Ge additions and an increase of near-surface diffusion in compressively stressed layers. Analysis of lattice diffusion shows that: i) in unstressed layers, B lattice diffusion coefficient decreases with increasing Ge concentration, ii) at constant Ge concentration, the diffusion coefficient of B decreases with compressive biaxial stress and increases with tensile biaxial stress, iii) the volume of activation of B diffusion () is positive for biaxial stress while it is negative in the case of hydrostatic pressure. This confirms that under a biaxial stress the activation volume is reduced to the relaxation volume

Kaon properties and cross sections in nuclear medium

Results for the $\pi + N \to \Lambda, \Sigma + K$ reactions in nuclear matter of Ref. nucl-th/0004011 are presented. To evaluate the in-medium modification of the reaction amplitude as a function of the baryonic density we introduce relativistic, mean-field potentials for the initial, final and intermediate mesonic and baryonic states in the resonance model. These vector and scalar potentials were calculated using the quark meson coupling model. Contrary to earlier work which has not allowed for the change of the cross section in medium, we find that the data for kaon production at SIS energies are consistent with a repulsive $K^+$-nucleus potential.Comment: 5 pages, 3 postscript figures included, uses iopart.cls and iopart10.clo (included), presented by K.T. at the 5th International Conference on Strangeness in Quark Matter, July 20 - 25, 2000, Berkeley, California, to be published in the proceedings, J. Phys. G. An explanation has been added in Sec. 3 with a new figur

Resonance model study of strangeness production in pp collisions

Results for the energy dependence of the elementary kaon production cross sections in proton-proton collisions are reported. Calculations are performed within an extended version of the resonance model which was used for the previous studies of elementary kaon production in pion-nucleon and pion-$\Delta$ collisions. Although the model treatment is within the {\it empirical} tree level (observed widths for the resonances are used), it is fully relativistic, and includes all relevant baryon resonances up to 2 GeV. One of the purposes of this study is to provide the results for the simulation codes of subthreshold kaon production in heavy ion collisions. This is the first, consistent study of the elementary kaon production reactions including both $\pi B$ and $B B$ ($B=N, \Delta$) collisions on the same footing. Comparisons are made between the calculated results and the existing semi-empirical parametrizations which are widely used for the simulation codes, as well as the experimental data.Comment: 10 pages with 5 postscript figures, Latex, revised version for publication in Phys. Lett.

Production of a0a_0-mesons in pp and pn reactions

We investigate the cross section for the reaction $NN \to NNa_0$ near threshold and at medium energies. An effective Lagrangian approach with one-pion exchange is applied to analyze different contributions to the cross section for different isospin channels. The Reggeon exchange mechanism is also considered. The results are used to calculate the contribution of the $a_0$ meson to the cross sections and invariant $K \bar K$ mass distributions of the reactions $pp\to pn K^+\bar K^0$ and $pp\to pp K^+K^-$. It is found that the experimental observation of $a_0^+$ mesons in the reaction $pp\to pn K^+\bar K^0$ is much more promising than the observation of $a_0^0$ mesons in the reaction $pp\to pp K^+K^-$.Comment: 26 pages, including 11 eps figures, to be bublished in J. Phys.