Oath as Factor of Ensuring Sovereignty of Russia

In the article, reveal a problem of ensuring political sovereignty of Russia in the conditions of uneven, contradictory and dynamic socio-political and economic world development. The sharpness of a problem is connected with decrease in level of the public administration caused on the one hand — easing of responsibility of public servants and preservation of high level of corruption in public authorities. With another, — with calls of the “fourth” technological revolution. The major consequence of which information technology development and formations of “digital” economy is. One of the major conditions, according to the author, ensuring political sovereignty of the Russian Federation, in particular, of its modern form, “information” sovereignty, is introductions of institute of the oath in public service, and first of all in civil. The institute of the oath as the world practice on the example of its application in a number of the states, introduced in the Russian political practice shows, will allow lowering, according to the author, the level of the negative phenomena as irresponsibility and corruption in civil public service and will allow providing higher quality of public administration

USSR and Contemporary USA: Two Paradigms of the Social Development Deadlock

This article contains reflections of the author about two essentially different approaches by the ways of historical social development: liberal and socialist, each of which has provided social progress on a certain interval of time, at the same time, in process of realization and in different degree, each of them was deadlock. The author claims that without consideration of features and specific conditions of historical development of the countries, instilment of the way of social development, brings eventually to the deadlock. The author believes that only following to the natural course of social development of the concrete countries, without his artificial acceleration and taking into account positive experience what offers concrete way, the social progress of the concrete country and state can be provided

Selective area epitaxy of gallium phosphide-based nanostructures on microsphere lithography-patterned Si wafers for visible light optoelectronics

In this study, we present the selective area plasma-assisted molecular beam epitaxial growth of GaP-based nanoheterostructures (nanostubs), incorporating direct bandgap GaAsP or GaPN segments, on patterned SiO2/ Si(001) wafers. A microsphere optical lithography and anisotropic Si wet-etching techniques were employed for wafer-scale surface patterning through SiO2 growth mask, allowing to obtain either planar or pyramidal pit nucleation site morphologies. X-ray diffraction reciprocal space mapping and Raman microspectroscopy studies confirm compositional homogeneity of the nanostub arrays. The dilute nitride nanostubs display the narrowest and most intense visible red photoluminescence response at room temperature, which is an order of magnitude higher compared to the GaAsP ones. The formation of the nitrogen sub-band in GaPN alloy was confirmed in the framework of density functional theory, providing insights for interpreting the experimental results. These findings demonstrate the feasibility of the proposed approach for fabricating the ordered arrays of nanoscale visible light emitters on silicon

Topological states induced by local structural modification of the polar BiTeI(0001) surface

The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surface of BiTeI(0001) induced by annealing in vacuum. Using scanning tunneling microscopy we show that the annealing-induced change in the near-surface stoichiometry results in a structural change from a non-centrosymmetric triple-layered to a quintuple-layered structure. The structural change gives rise to the emergence of topological surface states with helical spin texture as demonstrated by angle-resolved photoemission experiments and relativistic first-principles calculations. The results provide a way to modify the electronic structure of layered materials by a controlled manipulation of the atomic stackingThis work was supported by the Deutsche Forschungsgemeinschaft through SFB1170 (project A01), and partly by the Tomsk State University competitiveness improvement programme (project No. 8.1.01.201 7), by the Russian Science Foundation (Grants No. 17-12-01047, in part of crystal growth and ARPES measurements (figure 4) and 18-12-00169, in part of DFT calculations), Russian Foundation for Basic Research (Grant No. 17- 02-00729) and Saint Petersburg State University (project 15.61.202.201 5).Peer reviewe

Cobalt on calcium fluoride: Initial stages of growth and magnetic properties

Epitaxial cobalt films on CaF2(1 1 0) buffer layers on Si(0 0 1) were grown by molecular beam epitaxy. It is found that Co grows in a face-centered cubic lattice forming nanodimensional islands. The islands tend to align along the parallel grooves which characterize the self-patterned CaF2(1 1 0) surface grown on Si(0 0 1). Photoemission was used to probe the uniformity of the film and the occurrence of chemical reactions with the substrate. X-ray magnetic circular dichroism at the Co L2,3 edges was used to access the magnetic properties of the films. The thick Co film presents an in-plane easy magnetization axis along the directions of the grooves of the CaF2(1 1 0) surface