Structural and electronic properties of SrZrO3 and Sr(Ti,Zr) O3 alloys

Using hybrid density functional calculations, we study the electronic and structural properties of SrZrO3 and ordered Sr(Ti,Zr)O3 alloys. Calculations were performed for the ground-state orthorhombic (Pnma) and high-temperature cubic (Pm3m) phases of SrZrO3. The variation of the lattice parameters and band gaps with Ti addition was studied using ordered SrTixZr1-xO3 structures with x=0, 0.25, 0.5, 0.75, and 1. As Ti is added to SrZrO3, the lattice parameter is reduced and closely follows Vegard's law. On the other hand, the band gap shows a large bowing and is highly sensitive to the Ti distribution. For x=0.5, we find that arranging the Ti and Zr atoms into a 1×1SrZrO3/SrTiO3 superlattice along the [001] direction leads to interesting properties, including a highly dispersive single band at the conduction-band minimum (CBM), which is absent in both parent compounds, and a band gap close to that of pure SrTiO3. These features are explained by the splitting of the lowest three conduction-band states due to the reduced symmetry of the superlattice, lowering the band originating from the in-plane Ti 3dxy orbitals. The lifting of the t2g orbital degeneracy around the CBM suppresses scattering due to electron-phonon interactions. Our results demonstrate how short-period SrZrO3/SrTiO3 superlattices could be exploited to engineer the band structure and improve carrier mobility compared to bulk SrTiO3

Sources of electrical conductivity in SnO₂

SnO2 is widely used as a transparent conductor and sensor material. Better understanding and control of its conductivity would enhance its performance in existing applications and enable new ones, such as in light emitters. Using density functional theory, we show that the conventional attribution of n-type conductivity to intrinsic point defects is incorrect. Unintentional incorporation of hydrogen provides a consistent explanation of experimental observations. Most importantly, we find that SnO2 offers excellent prospects for p-type doping by incorporation of acceptors on the Sn site. Specific strategies for optimizing acceptor incorporation are presented

Impact of electric-field dependent dielectric constants on two-dimensional electron gases in complex oxides

High-density two-dimensional electron gas (2DEG) can be formed at complex oxide interfaces such as SrTiO3/GdTiO3 and SrTiO3/LaAlO3. The electric field in the vicinity of the interface depends on the dielectric properties of the material as well as on the electron distribution. However, it is known that electric fields can strongly modify the dielectric constant of SrTiO3 as well as other complex oxides. Solving the electrostatic problem thus requires a self-consistent approach in which the dielectric constant varies according to the local magnitude of the field. We have implemented the field dependence of the dielectric constant in a Schrodinger-Poisson solver in order to study its effect on the electron distribution in a 2DEG. Using the SrTiO3/GdTiO3 interface as an example, we demonstrate that including the field dependence results in the 2DEG being confined closer to the interface compared to assuming a single field-independent value for the dielectric constant. Our conclusions also apply to SrTiO3/LaAlO3 as well as other similar interfaces

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functional calculations, we investigate the effects of nitrogen vacancies (VN) and Mg-vacancy complexes (MgGa-VN) on the electrical and optical properties of GaN. We find that MgGa-VN are compensating centers in p-type but electrically inactive in n-type GaN. They give rise to a broad emission at 1.8 eV, explaining the red luminescence that is frequently observed in Mg-doped GaN, regardless of the Fermi level. Nitrogen vacancies are also compensating centers in p-type GaN and likely contribute to the yellow luminescence that has been observed in Mg-doped GaN

First-principles study of structural, electronic and thermodynamic properties of (ZnO)n_n(n=2-16) clusters

The structural, electronic, and vibrational thermodynamic properties of the (ZnO)$_n$ (n=2-16) clusters are studied using density functional - full potential computations. The results show, small clusters up to $n=9$ stabilize in the 2D ring shape geometries while the larger clusters prefer the 3D cage like structures. The ring to cage structural cross over in ZnO clusters is studied by investigating the behavior of the Zn-O-Zn bond angle, the Zn-O bond strength, and the number of bonds in the systems. It is argued that 12 is the lowest magic number of ZnO clusters at ground state, while finite temperature vibrational excitations enhance the relative stability of the (ZnO)$_9$ cluster and make it a magic system at temperatures above about 170 K. The obtained electronic structure of ZnO clusters before and after applying the many-body GW corrections evidence a size induced red shift originated from the ring to cage structural cross over in these systems. The behavior of the extremal points of electron density of the clusters along with the extrapolated cluster binding energies at very large sizes may be evidences for existence of a metastable structure for large ZnO nanostructures, different with the bulk ZnO structure.Comment: 8 pages, 8 figures and 1 tabl