328 research outputs found
Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling
We report on an \textit{ab}-anisotropy of and in
ramp-edge junctions between untwinned YBaCuO and % -wave
Nb. For these junctions, the angle with the YBaCuO
crystal b-axis is varied as a single parameter. The
A()-dependence presents 2-fold symmetry. The minima in
at suggest a real s-wave subdominant
component and negligible -wave or imaginary s-wave admixtures. The
()-dependence is well-fitted by 83% -, 15%
isotropic - and 2% anisotropic s-wave order parameter symmetry, consistent
with .Comment: 4 pages, 3 figures, to be published in Physical Review Letter
Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements
We report time-resolved Kerr effect measurements of magnetization dynamics in
ferromagnetic SrRuO3. We observe that the demagnetization time slows
substantially at temperatures within 15K of the Curie temperature, which is ~
150K. We analyze the data with a phenomenological model that relates the
demagnetization time to the spin flip time. In agreement with our observations
the model yields a demagnetization time that is inversely proportional to T-Tc.
We also make a direct comparison of the spin flip rate and the Gilbert damping
coefficient showing that their ratio very close to kBTc, indicating a common
origin for these phenomena
Electronically coupled complementary interfaces between perovskite band insulators
Perovskite oxides exhibit a plethora of exceptional electronic properties,
providing the basis for novel concepts of oxide-electronic devices. The
interest in these materials is even extended by the remarkable characteristics
of their interfaces. Studies on single epitaxial connections between the two
wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either
high-mobility electron conductors or insulating, depending on the atomic
stacking sequences. In the latter case they are conceivably positively charged.
For device applications, as well as for basic understanding of the interface
conduction mechanism, it is important to investigate the electronic coupling of
closely-spaced complementary interfaces. Here we report the successful
realization of such electronically coupled complementary interfaces in SrTiO3 -
LaAlO3 thin film multilayer structures, in which the atomic stacking sequence
at the interfaces was confirmed by quantitative transmission electron
microscopy. We found a critical separation distance of 6 perovskite unit cell
layers, corresponding to approximately 2.3 nm, below which a decrease of the
interface conductivity and carrier density occurs. Interestingly, the high
carrier mobilities characterizing the separate electron doped interfaces are
found to be maintained in coupled structures down to sub-nanometer interface
spacing
Local probing of coupled interfaces between two-dimensional electron and hole gases in oxide heterostructures by variable-temperature scanning tunneling spectroscopy
The electronic structure of an epitaxial oxide heterostructure containing two spatially separated two-dimensional conducting sheets, one electronlike (2DEG) and the other holelike (2DHG), has been investigated using variable temperature scanning tunneling spectroscopy. Heterostructures of LaAlO3/SrTiO3 bilayers on (001)-oriented SrTiO3 (STO) substrates provide the unique possibility to study the coupling between subnanometer spaced conducting interfaces. The band gap increases dramatically at low temperatures due to a blocking of the transition from the conduction band of the STO substrate to the top of the valence band of the STO capping layer. This prevents the replenishment of the depleted electrons in the capping layer from the underlying 2DEG and enables charging of the 2DHG by applying a negative sample bias voltage within the band gap region. At low temperatures the 2DHG can be probed separately with the proposed experimental geometry, although the 2DEG is located less than 1 nm belo
Parallel electron-hole bilayer conductivity from electronic interface reconstruction
The perovskite SrTiO-LaAlO structure has advanced to a model system
to investigate the rich electronic phenomena arising at polar interfaces. Using
first principles calculations and transport measurements we demonstrate that an
additional SrTiO capping layer prevents structural and chemical
reconstruction at the LaAlO surface and triggers the electronic
reconstruction at a significantly lower LaAlO film thickness than for the
uncapped systems. Combined theoretical and experimental evidence (from
magnetotransport and ultraviolet photoelectron spectroscopy) suggests two
spatially separated sheets with electron and hole carriers, that are as close
as 1 nm.Comment: Phys. Rev. Lett., in pres
Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics
In this article, an overview of the fabrication and properties of high
quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high quality LSMO film
combines a smooth surface morphology with a large magnetization and a small
residual resistivity, while avoiding precipitates and surface segregation. In
literature, typically only a few of these issues are adressed. We therefore
present a thorough characterization of our films, which were grown by pulsed
laser deposition. The films were characterized with reflection high energy
electron diffraction, atomic force microscopy, x-ray diffraction, magnetization
and transport measurements, x-ray photoelectron spectroscopy and scanning
transmission electron microscopy. The films have a saturation magnetization of
4.0 {\mu}B/Mn, a Curie temperature of 350 K and a residual resistivity of 60
{\mu}{\Omega}cm. These results indicate that high quality films, combining both
large magnetization and small residual resistivity, were realized. A comparison
between different samples presented in literature shows that focussing on a
single property is insufficient for the optimization of the deposition process.
For high quality films, all properties have to be adressed. For LSMO devices,
the thin film quality is crucial for the device performance. Therefore, this
research is important for the application of LSMO in devices.Comment: Accepted for publication in Journal of Physics D - Applied Physic
Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers
We report spectroscopic ellipsometry measurements of the anisotropy of the
interband transitions parallel and perpendicular to the planes of
(LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information
about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti
ions. In combination with LDA+U calculations, we suggest that 2D confinement in
the TiO2 slabs lifts the degeneracy of the t_{2g} states leaving only the
planar d_xy orbitals occupied. We outline that these multilayers can serve as a
model system for the study of the t_{2g} 2D Hubbard model.Comment: 7 pages, 4 figures. Accepted for publication in Phys. Rev. Let
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