Migration processes and socio-economic development of the regions

Migration processes management is an important public administration element. Migration affects many aspects of society — economics, public safety, and culture. Without a competent migration policy, a conflict between residents and migrants is inevitable in society. The problem of the relationship between migration flows and the level of socio-economic development of territories is considered herein. The data from the RIA Rating Agency and the Federal State Statistics Service of Russia are used in this study. The main research method is the correlation-regression analysis. As part of the study, the hypothesis that migration flows tend to the regions that are strong in terms of socioeconomic status has not been confirmed

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2. A qualitative mechanism of gas sensitivity for the In2O3-Ga2O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2O3, κ(ε)-Ga2O3 and In2O3-Ga2O3 films were compared. The advantage of the In2O3-Ga2O3 mixed compounds films compared with Ga2O3 and In2O3 films is a low base electrical resistivity with a relatively high gas sensitivity

Effect of Si+ ion irradiation of α-Ga 2O3 epitaxial layers on their hydrogen sensitivity

He effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer grown by halide vapor phase epitaxy with implanted Si+ ions allows effective control of its sensitivity to H2, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to H2 occurred for samples with Si+ ion irradiation dose of 8·1012 cm-2 at 400ºC. The mechanism of sensitivity of α-Ga2O3 epitaxial layers irradiated with Si+ to H2 is discussed

Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure

α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the α-Ga2O3/α-Cr2O3 heterostructures exhibits weak rectifying properties and in comparison with α-Ga2O3 films has a higher response speed when exposed to ultraviolet radiatio

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga₂O₃ Polymorphs

In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects