Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb

The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on th

Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV

Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV

Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density

Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum efficiency with increasing temperature is observed. Simulation of the dependences of the quantum efficiency of LED structures on the current showed that, if account is taken of the ballistic and hopping transport of charge carriers in the active region of the structure, the calculated and experimental dependences are in good agreement. A decrease in the thickness of the active region of the structure leads to a weakening of the temperature dependence of the quantum efficiency at high current density

Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density

Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum efficiency with increasing temperature is observed. Simulation of the dependences of the quantum efficiency of LED structures on the current showed that, if account is taken of the ballistic and hopping transport of charge carriers in the active region of the structure, the calculated and experimental dependences are in good agreement. A decrease in the thickness of the active region of the structure leads to a weakening of the temperature dependence of the quantum efficiency at high current density