Deep Learning for Semantic Part Segmentation with High-Level Guidance

In this work we address the task of segmenting an object into its parts, or semantic part segmentation. We start by adapting a state-of-the-art semantic segmentation system to this task, and show that a combination of a fully-convolutional Deep CNN system coupled with Dense CRF labelling provides excellent results for a broad range of object categories. Still, this approach remains agnostic to high-level constraints between object parts. We introduce such prior information by means of the Restricted Boltzmann Machine, adapted to our task and train our model in an discriminative fashion, as a hidden CRF, demonstrating that prior information can yield additional improvements. We also investigate the performance of our approach ``in the wild'', without information concerning the objects' bounding boxes, using an object detector to guide a multi-scale segmentation scheme. We evaluate the performance of our approach on the Penn-Fudan and LFW datasets for the tasks of pedestrian parsing and face labelling respectively. We show superior performance with respect to competitive methods that have been extensively engineered on these benchmarks, as well as realistic qualitative results on part segmentation, even for occluded or deformable objects. We also provide quantitative and extensive qualitative results on three classes from the PASCAL Parts dataset. Finally, we show that our multi-scale segmentation scheme can boost accuracy, recovering segmentations for finer parts.Comment: 11 pages (including references), 3 figures, 2 table

Charging and Discharging Processes in AlN Dielectric Films Deposited by Plasma Assisted Molecular Beam Epitaxy

In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal – Insulator – Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current – voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping

GABRB3 mutations: a new and emerging cause of early infantile epileptic encephalopathy

The gamma-aminobutyric acid type A receptor β3 gene (GABRB3) encodes the β3-subunit of the gamma-aminobutyric acid type A (GABAA ) receptor, which mediates inhibitory signalling within the central nervous system. Recently, GABRB3 mutations have been identified in a few patients with infantile spasms and Lennox-Gastaut syndrome. We report the clinical and electrographic features of a novel case of GABRB3-related early-onset epileptic encephalopathy. Our patient presented with neonatal hypotonia and feeding difficulties, then developed pharmacoresistant epileptic encephalopathy, characterized by multiple seizure types from 3 months of age. Electroencephalography demonstrated ictal generalized and interictal multifocal epileptiform abnormalities. Using a SureSelectXT custom multiple gene panel covering 48 early infantile epileptic encephalopathy/developmental delay genes, a novel de novo GABRB3 heterozygous missense mutation, c.860C>T (p.Thr287Ile), was identified and confirmed on Sanger sequencing. GABRB3 is an emerging cause of early-onset epilepsy. Novel genetic technologies, such as whole-exome/genome sequencing and multiple gene panels, will undoubtedly identify further cases, allowing more detailed electroclinical delineation of the GABRB3-related genotypic and phenotypic spectra

Properties of contactless and contacted charging in MEMS capacitive switches

The dielectric charging in MEMS capacitive switches is a complex effect. The high electric field during pull-down causes intrinsic free charge migration and dipole orientation as well as charge injection. The macroscopic dipole moment of the first two mechanisms is opposite to the one arising from charge injection. This causes partial compensation hence mitigates the overall charging and increases the device lifetime. The charging due to intrinsic free charge migration and dipole orientation can be monitored under contactless electric field application in the pull-up state. The paper investigates the characteristics of contactless charging and compares them with the ones of contacted charging. The characteristics of the discharging process that follows each charging procedure are also presented

ρ\rho - nucleus bound states in Walecka model

Possible formation of $\rho$ nucleus bound state is studied in the framework of Walecka model. The bound states are found in different nuclei ranging from $^3He$ to $^{208}Pb$. These bound states may have a direct bearing on the recent experiments on the photoproduction of $\rho$ meson in the nuclear medium.Comment: RevTeX fil