Density of near-extreme events

We provide a quantitative analysis of the phenomenon of crowding of near-extreme events by computing exactly the density of states (DOS) near the maximum of a set of independent and identically distributed random variables. We show that the mean DOS converges to three different limiting forms depending on whether the tail of the distribution of the random variables decays slower than, faster than, or as a pure exponential function. We argue that some of these results would remain valid even for certain {\em correlated} cases and verify it for power-law correlated stationary Gaussian sequences. Satisfactory agreement is found between the near-maximum crowding in the summer temperature reconstruction data of western Siberia and the theoretical prediction.Comment: 4 pages, 3 figures, revtex4. Minor corrections, references updated. This is slightly extended version of the Published one (Phys. Rev. Lett.

Controlled single electron transfer between Si:P dots

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.Comment: 3 figures, 3 page

Charge-based silicon quantum computer architectures using controlled single-ion implantation

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.Comment: 9 pages, 5 figure

Charge-based quantum computing using single donors in semiconductors

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionised. Surface electrodes control the qubit and a radio-frequency single electron transistor provides fast readout. The calculated single gate times, of order 50ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.Comment: 5 pages, 4 figures, updated version submitted to Physical Review

Fixed Effect Estimation of Large T Panel Data Models

This article reviews recent advances in fixed effect estimation of panel data models for long panels, where the number of time periods is relatively large. We focus on semiparametric models with unobserved individual and time effects, where the distribution of the outcome variable conditional on covariates and unobserved effects is specified parametrically, while the distribution of the unobserved effects is left unrestricted. Compared to existing reviews on long panels (Arellano and Hahn 2007; a section in Arellano and Bonhomme 2011) we discuss models with both individual and time effects, split-panel Jackknife bias corrections, unbalanced panels, distribution and quantile effects, and other extensions. Understanding and correcting the incidental parameter bias caused by the estimation of many fixed effects is our main focus, and the unifying theme is that the order of this bias is given by the simple formula p/n for all models discussed, with p the number of estimated parameters and n the total sample size.Comment: 40 pages, 1 tabl

Fosamprenavir or atazanavir once daily boosted with ritonavir 100 mg, plus tenofovir/emtricitabine, for the initial treatment of HIV infection: 48-week results of ALERT

<p>Abstract</p> <p>Background</p> <p>Once-daily (QD) ritonavir 100 mg-boosted fosamprenavir 1400 mg (FPV/r100) or atazanavir 300 mg (ATV/r100), plus tenofovir/emtricitabine (TDF/FTC) 300 mg/200 mg, have not been compared as initial antiretroviral treatment. To address this data gap, we conducted an open-label, multicenter 48-week study (ALERT) in 106 antiretroviral-naïve, HIV-infected patients (median HIV-1 RNA 4.9 log₁₀copies/mL; CD4+ count 191 cells/mm³) randomly assigned to the FPV/r100 or ATV/r100 regimens.</p> <p>Results</p> <p>At baseline, the FPV/r100 or ATV/r100 arms were well-matched for HIV-1 RNA (median, 4.9 log₁₀copies/mL [both]), CD4+ count (mean, 176 vs 205 cells/mm³). At week 48, intent-to-treat: missing/discontinuation = failure analysis showed similar responses to FPV/r100 and ATV/r100 (HIV-1 RNA < 50 copies/mL: 75% (40/53) vs 83% (44/53), p = 0.34 [Cochran-Mantel-Haenszel test]); mean CD4+ count change-from-baseline: +170 vs +183 cells/mm³, p = 0.398 [Wilcoxon rank sum test]). Fasting total/LDL/HDL-cholesterol changes-from-baseline were also similar, although week 48 median fasting triglycerides were higher with FPV/r100 (150 vs 131 mg/dL). FPV/r100-treated patients experienced fewer treatment-related grade 2–4 adverse events (15% vs 57%), with differences driven by ATV-related hyperbilirubinemia. Three patients discontinued TDF/FTC because their GFR decreased to <50 mL/min.</p> <p>Conclusion</p> <p>The all-QD regimens of FPV/r100 and ATV/r100, plus TDF/FTC, provided similar virologic, CD4+ response, and fasting total/LDL/HDL-cholesterol changes through 48 weeks. Fewer FPV/r100-treated patients experienced treatment-related grade 2–4 adverse events.</p

Quantum cellular automata quantum computing with endohedral fullerenes

We present a scheme to perform universal quantum computation using global addressing techniques as applied to a physical system of endohedrally doped fullerenes. The system consists of an ABAB linear array of Group V endohedrally doped fullerenes. Each molecule spin site consists of a nuclear spin coupled via a Hyperfine interaction to an electron spin. The electron spin of each molecule is in a quartet ground state $S=3/2$. Neighboring molecular electron spins are coupled via a magnetic dipole interaction. We find that an all-electron construction of a quantum cellular automata is frustrated due to the degeneracy of the electronic transitions. However, we can construct a quantum celluar automata quantum computing architecture using these molecules by encoding the quantum information on the nuclear spins while using the electron spins as a local bus. We deduce the NMR and ESR pulses required to execute the basic cellular automata operation and obtain a rough figure of merit for the the number of gate operations per decoherence time. We find that this figure of merit compares well with other physical quantum computer proposals. We argue that the proposed architecture meets well the first four DiVincenzo criteria and we outline various routes towards meeting the fifth criteria: qubit readout.Comment: 16 pages, Latex, 5 figures, See http://planck.thphys.may.ie/QIPDDF/ submitted to Phys. Rev.

Single-spin readout for buried dopant semiconductor qubits

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultra-sensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D- state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D+, the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.Comment: 12 pages, 5 figures, 1 tabl