341 research outputs found

    Zero-energy peak of the density of states and localization properties of a one-dimensional Frenkel exciton: Off-diagonal disorder

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    We study a one-dimensional Frenkel Hamiltonian with off-diagonal disorder, focusing our attention on the physical nature of the zero-energy peak of the density of states. The character of excitonic states (localized or delocalized) is also examined in the vicinity of this peak. It is shown that the state being responsible for the peak is localized. A detailed comparison of the nearest-neighbor approach with the long-range dipole-dipole coupling is performed.Comment: 15 pages with 7 figures (REVTeX). To appear in Physical Review

    Understanding delocalization in the Continuous Random Dimer model

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    We propose an explanation of the bands of extended states appearing in random one dimensional models with correlated disorder, focusing on the Continuous Random Dimer model [A.\ S\'{a}nchez, E.\ Maci\'a, and F.\ Dom\'\i nguez-Adame, Phys.\ Rev.\ B {\bf 49}, 147 (1994)]. We show exactly that the transmission coefficient at the resonant energy is independent of the number of host sites between two consecutive dimers. This allows us to understand why are there bands of extended states for every realization of the model as well as the dependence of the bandwidths on the concentration. We carry out a perturbative calculation that sheds more light on the above results. In the conclusion we discuss generalizations of our results to other models and possible applications which arise from our new insight of this problem.Comment: REVTeX 3.0, 4 pages, 4 figures (hard copy on request from [email protected]), Submitted to Phys Rev

    Finite temperature dynamics of vortices in the two dimensional anisotropic Heisenberg model

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    We study the effects of finite temperature on the dynamics of non-planar vortices in the classical, two-dimensional anisotropic Heisenberg model with XY- or easy-plane symmetry. To this end, we analyze a generalized Landau-Lifshitz equation including additive white noise and Gilbert damping. Using a collective variable theory with no adjustable parameters we derive an equation of motion for the vortices with stochastic forces which are shown to represent white noise with an effective diffusion constant linearly dependent on temperature. We solve these stochastic equations of motion by means of a Green's function formalism and obtain the mean vortex trajectory and its variance. We find a non-standard time dependence for the variance of the components perpendicular to the driving force. We compare the analytical results with Langevin dynamics simulations and find a good agreement up to temperatures of the order of 25% of the Kosterlitz-Thouless transition temperature. Finally, we discuss the reasons why our approach is not appropriate for higher temperatures as well as the discreteness effects observed in the numerical simulations.Comment: 12 pages, 8 figures, accepted for publication in European Physical Journal B (uses EPJ LaTeX

    FIBONACCI SUPERLATTICES OF NARROW-GAP III-V SEMICONDUCTORS

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    We report theoretical electronic structure of Fibonacci superlattices of narrow-gap III-V semiconductors. Electron dynamics is accurately described within the envelope-function approximation in a two-band model. Quasiperiodicity is introduced by considering two different III-V semiconductor layers and arranging them according to the Fibonacci series along the growth direction. The resulting energy spectrum is then found by solving exactly the corresponding effective-mass (Dirac-like) wave equation using tranfer-matrix techniques. We find that a self-similar electronic spectrum can be seen in the band structure. Electronic transport properties of samples are also studied and related to the degree of spatial localization of electronic envelope-functions via Landauer resistance and Lyapunov coefficient. As a working example, we consider type II InAs/GaSb superlattices and discuss in detail our results in this system.Comment: REVTeX 3.0, 16 pages, 8 figures available upon request. To appear in Semiconductor Science and Technolog

    Stability and decay of Bloch oscillations in presence of time-dependent nonlinearity

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    We consider Bloch oscillations of Bose-Einstein condensates in presence of a time-modulated s-wave scattering length. Generically, interaction leads to dephasing and decay of the wave packet. Based on a cyclic-time argument, we find---additionally to the linear Bloch oscillation and a rigid soliton solution---an infinite family of modulations that lead to a periodic time evolution of the wave packet. In order to quantitatively describe the dynamics of Bloch oscillations in presence of time-modulated interactions, we employ two complementary methods: collective-coordinates and the linear stability analysis of an extended wave packet. We provide instructive examples and address the question of robustness against external perturbations.Comment: 15 pages, 8 figures. Slightly amended final versio

    Dynamics and stability of Bose-Einstein solitons in tilted optical lattices

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    Bloch oscillations of Bose-Einstein condensates realize sensitive matter-wave interferometers. We investigate the dynamics and stability of bright-soliton wave packets in one-dimensional tilted optical lattices with a modulated mean-field interaction g(t)g(t). By means of a time-reversal argument, we prove the stability of Bloch oscillations of breathing solitons that would be quasistatically unstable. Floquet theory shows that these breathing solitons can be more stable against certain experimental perturbations than rigid solitons or even non-interacting wave packets.Comment: final, published versio

    Dynamical phenomena in Fibonacci Semiconductor Superlattices

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    We present a detailed study of the dynamics of electronic wavepackets in Fibonacci semiconductor superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. Coherent propagation of electrons is described by means of a scalar Hamiltonian using the effective-mass approximation. We have found that an initial Gaussian wavepacket is filtered selectively when passing through the superlattice. This means that only those components of the wavepacket whose wavenumber belong to allowed subminibands of the fractal-like energy spectrum can propagate over the entire superlattice. The Fourier pattern of the transmitted part of the wavepacket presents clear evidences of fractality reproducing those of the underlying energy spectrum. This phenomenon persists even in the presence of unintentional disorder due to growth imperfections. Finally, we have demonstrated that periodic coherent-field induced oscillations (Bloch oscillations), which we are able to observe in our simulations of periodic superlattices, are replaced in Fibonacci superlattices by more complex oscillations displaying quasiperiodic signatures, thus sheding more light onto the very peculiar nature of the electronic states in these systems.Comment: 7 pagex, RevTex, 5 Postscript figures. Physical Review B (in press

    Electron dynamics in intentionally disordered semiconductor superlattices

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    We study the dynamical behavior of disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Dom\'{\i}nguez-Adame {\em et al.} [Phys. Rev. B {\bf 51}, 14 ,359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controllingthe outp ut band using a dc electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work.Comment: 10 pagex, RevTex, 13 Postscript figures. Physical Review B (in press
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