Spin orientation of a two-dimensional electron gas by a high-frequency electric field

Coupling of spin states and space motion of conduction electrons due to spin-orbit interaction opens up possibilities for manipulation of the electron spins by electrical means. It is shown here that spin orientation of a two-dimensional electron gas can be achieved by excitation of the carriers with a linearly polarized high-frequency electric field. In (001)-grown quantum well structures excitation with in-plane ac electric field induces orientation of the electron spins along the quantum well normal, with the spin sign and the magnitude depending on the field polarization.Comment: 5 pages, 1 figur

The Bell Theorem as a Special Case of a Theorem of Bass

The theorem of Bell states that certain results of quantum mechanics violate inequalities that are valid for objective local random variables. We show that the inequalities of Bell are special cases of theorems found ten years earlier by Bass and stated in full generality by Vorob'ev. This fact implies precise necessary and sufficient mathematical conditions for the validity of the Bell inequalities. We show that these precise conditions differ significantly from the definition of objective local variable spaces and as an application that the Bell inequalities may be violated even for objective local random variables.Comment: 15 pages, 2 figure

Generation of spin currents and spin densities in systems with reduced symmetry

We show that the spin-current response of a semiconductor crystal to an external electric field is considerably more complex than previously assumed. While in systems of high symmetry only the spin-Hall components are allowed, in systems of lower symmetry other non-spin-Hall components may be present. We argue that, when spin-orbit interactions are present only in the band structure, the distinction between intrinsic and extrinsic contributions to the spin current is not useful. We show that the generation of spin currents and that of spin densities in an electric field are closely related, and that our general theory provides a systematic way to distinguish between them in experiment. We discuss also the meaning of vertex corrections in systems with spin-orbit interactions.Comment: 4 page

Origin of magnetoelectric behavior in BiFeO3_3

The magnetoelectric behavior of BiFeO$_3$ has been explored on the basis of accurate density functional calculations. The structural, electronic, magnetic, and ferroelectric properties of BiFeO$_3$ are predicted correctly without including strong correlation effect in the calculation. Moreover, the experimentally-observed elongation of cubic perovskite-like lattice along the [111] direction is correctly reproduced. At high pressure we predicted a pressure-induced structural transition and the total energy calculations at expanded lattice show two lower energy ferroelectric phases, closer in energy to the ground state phase. Band-structure calculations show that BiFeO$_3$ will be an insulator in A- and G-type antiferromagnetic phases and a metal in other magnetic configurations. Chemical bonding in BiFeO$_3$ has been analyzed using various tools and electron localization function analysis shows that stereochemically active lone-pair electrons at the Bi sites are responsible for displacements of the Bi atoms from the centro-symmetric to the noncentrosymmetric structure and hence the ferroelectricity. A large ferroelectric polarization (88.7 $\mu$C/cm$^{2}$) is predicted in accordance with recent experimental findings. The net polarization is found to mainly ($>$ 98%) originate from Bi atoms. Moreover the large scatter in experimentally reported polarization values is due to the large anisotropy in the spontaneous polarization.Comment: 19 pages, 12 figures, 4 table

FIRST-PRINCIPLE STUDY OF THE TRITIUM BEHAVIOR IN A FLiBe MOLTEN SALT MIXTURE

This article presents the results of ab initio MD modeling and research of FLiBe molten salt at different temperatures and compositions. As a result, were obtained energetic characteristics of the system, made conclusions about the behavior of tritium and helium

Principals of the theory of light reflection and absorption by low-dimensional semiconductor objects in quantizing magnetic fields at monochromatic and pulse excitations

The bases of the theory of light reflection and absorption by low-dimensional semiconductor objects (quantum wells, wires and dots) at both monochromatic and pulse irradiations and at any form of light pulses are developed. The semiconductor object may be placed in a stationary quantizing magnetic field. As an example the case of normal light incidence on a quantum well surface is considered. The width of the quantum well may be comparable to the light wave length and number of energy levels of electronic excitations is arbitrary. For Fourier-components of electric fields the integral equation (similar to the Dyson-equation) and solutions of this equation for some individual cases are obtained.Comment: 14 page

Influence of Anomalous Dispersion on Optical Characteristics of Quantum Wells

Frequency dependencies of optical characteristics (reflection, transmission and absorption of light) of a quantum well are investigated in a vicinity of interband resonant transitions in a case of two closely located excited energy levels. A wide quantum well in a quantizing magnetic field directed normally to the quantum-well plane, and monochromatic stimulating light are considered. Distinctions between refraction coefficients of barriers and quantum well, and a spatial dispersion of the light wave are taken into account. It is shown that at large radiative lifetimes of excited states in comparison with nonradiative lifetimes, the frequency dependence of the light reflection coefficient in the vicinity of resonant interband transitions is defined basically by a curve, similar to the curve of the anomalous dispersion of the refraction coefficient. The contribution of this curve weakens at alignment of radiative and nonradiative times, it is practically imperceptible at opposite ratio of lifetimes . It is shown also that the frequency dependencies similar to the anomalous dispersion do not arise in transmission and absorption coefficients.Comment: 10 pages, 6 figure

Symmetries of a class of nonlinear fourth order partial differential equations

In this paper we study symmetry reductions of a class of nonlinear fourth order partial differential equations \be u_{tt} = \left(\kappa u + \gamma u^2\right)_{xx} + u u_{xxxx} +\mu u_{xxtt}+\alpha u_x u_{xxx} + \beta u_{xx}^2, \ee where $\alpha$, $\beta$, $\gamma$, $\kappa$ and $\mu$ are constants. This equation may be thought of as a fourth order analogue of a generalization of the Camassa-Holm equation, about which there has been considerable recent interest. Further equation (1) is a ``Boussinesq-type'' equation which arises as a model of vibrations of an anharmonic mass-spring chain and admits both ``compacton'' and conventional solitons. A catalogue of symmetry reductions for equation (1) is obtained using the classical Lie method and the nonclassical method due to Bluman and Cole. In particular we obtain several reductions using the nonclassical method which are no} obtainable through the classical method

BAs and boride III-V alloys

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.Comment: 18 pages, 14 figures, 6 tables, 61 references. Accepted for publication in Phys. Rev. B. Scheduled to appear Oct. 15 200

ОСОБЕННОСТИ ФОРМИРОВАНИЯ ТОНКИХ ПЛЕНОК КРЕМНИЯ, ОСАЖДАЕМЫХ МАГНЕТРОННЫМ РАСПЫЛЕНИЕМ

The surface morphology and optical properties of Si coatings formed by magnetron sputtering were studied using atomic force microscopy, scanning electron microscopy, and spectrophotometry methods. The possibility to influence the surface morphology of coating (filamentous structures and/or round holes) and the location of maxima and minima in reflectance and transmittance via a controllable variation of magnetron sputtering regimes (substrate temperature and bias potential) is shown. Методами атомно-силовой и сканирующей электронной микроскопии, а также спектрофотометрии исследованы морфология поверхности и оптические характеристики тонких Si-покрытий, сформированных методом магнетронного распыления. Показано, что при контролируемой вариации технологических параметров магнетронного распыления таких, как температура подложки и потенциал смещения, можно менять морфологию поверхности пленок Si. Для некоторых режимов осаждения обнаружено появление на поверхности нитевидных структур и/или круглых углублений, изменения положения минимумов и максимумов в оптических спектрах отражения и пропускания.