Electron cyclotron resonance near the axis of the gas-dynamic trap

Propagation of an extraordinary electromagnetic wave in the vicinity of electron cyclotron resonance surface in an open linear trap is studied analytically, taking into account inhomogeneity of the magnetic field in paraxial approximation. Ray trajectories are derived from a reduced dispersion equation that makes it possible to avoid the difficulty associated with a transition from large propagation angles to the case of strictly longitudinal propagation. Our approach is based on the theory, originally developed by the Zvonkov and Timofeev [1], who used the paraxial approximation for the magnetic field strength, but did not consider the slope of the magnetic field lines, which led to considerable error, as has been recently noted by Gospodchikov and Smolyakova [2]. We have found ray trajectories in analytic form and demonstrated that the inhomogeneity of both the magnetic field strength and the field direction can qualitatively change the picture of wave propagation and significantly affect the efficiency of electron cyclotron heating of a plasma in a linear magnetic trap. Analysis of the ray trajectories has revealed a criterion for the resonance point on the axis of the trap to be an attractor for the ray trajectories. It is also shown that a family of ray trajectories can still reach the resonance point on the axis if the latter generally repels the ray trajectories. As an example, results of general theory are applied to the electron cyclotron resonance heating experiment which is under preparation on the Gas Dynamic Trap in the Budker Institute of Nuclear Physics [3]

New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime

We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.Comment: accepted proceedings of EP2DS-15 (to be published in Physica E

Renormalization of hole-hole interaction at decreasing Drude conductivity

The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor $\alpha_i<1$ in the conventional expression for the interaction correction.Comment: 6 pages, 5 figure

Quantum corrections to conductivity: from weak to strong localization

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_F l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $\sigma$ becomes significantly less than $e^{2}/h$ (the minimal $\sigma$ value achieved in our experiment is about $3\times 10^{-8}\Omega^{-1}$ at $k_Fl\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_Fl$ range are due to changes of quantum corrections.Comment: RevTex 4.0, 10 figures, 7 two-column page

Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells

We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.Comment: 15 pages, 9 figure

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period.Comment: 7 pages, 5 figure

Electron-electron interaction at decreasing kFlk_Fl

The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_Fl$ decrease.Comment: 5 pages, 6 figure

Successful experience of treatment of a patient with generalized non-GCB- DLBCL using the R-mNHL-BFM-90 protocol with lenalidomide: case report and review of literature

Diffuse large B-cell lymphoma is categorized by gene expression profiling into germinal center (GCB) and activated B-cell (ABC) subtype, also referred to as non-germinal center B-cell (non-GCB) by immunohistochemistry. ABC DLBCL is characterized by NF-κB pathway activation and high expression of IRF4/MUM1, a key transcription factor in B cell differentiation. Patients with ABC DLBCL have a significantly worse outcome when treated with standard chemotherapy (R-CHOP). Lenalidomide have shown activity in the ABC-DLBCL in combination with R-CHOP. But about 40% of patients remain resistant. We present the experience of treatment of a patient with generalized non-GCB-DLBCL using the intensive protocol R-mNHL-BFM-90 with lenalidomide