6 research outputs found

    Selective mass enhancement close to the quantum critical point in BaFe₂(As₁₋ₓ Pₓ )₂

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    A quantum critical point (QCP) is currently being conjectured for the BaFe₂(As₁₋ₓ Pₓ )₂ system at the critical value xc ≈ 0.3. In the proximity of a QCP, all thermodynamic and transport properties are expected to scale with a single characteristic energy, given by the quantum fluctuations. Such a universal behavior has not, however, been found in the superconducting upper critical field Hc2. Here we report Hc2 data for epitaxial thin films extracted from the electrical resistance measured in very high magnetic fields up to 67 Tesla. Using a multi-band analysis we find that Hc₂ is sensitive to the QCP, implying a significant charge carrier effective mass enhancement at the doping-induced QCP that is essentially band-dependent. Our results point to two qualitatively different groups of electrons in BaFe₂(As₁₋ₓ Pₓ )₂ . The first one (possibly associated to hot spots or whole Fermi sheets) has a strong mass enhancement at the QCP, and the second one is insensitive to the QCP. The observed duality could also be present in many other quantum critical systems

    Структура и свойства тонких пленок титаната-цирконата бария и титаната-станната бария для сверхвысокочастотных применений

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    Structural and radio frequency (RF) dielectric properties of thin films of ferroelectric solid solutions BaZrxTi1-xO3 and BaSnxTi1-xO3 obtained by RF magnetron sputtering of ceramic targets on Pt/ r-cut of Al2O3 sapphire substrate are investigated. A high tunability of thin layers and low values of dielectric loss acceptable for microwave application have been revealed.Исследованы структурные и высокочастотные диэлектрические свойства тонких пленок сегнетоэлектрических твердых растворов и выращенных методом высокочастотного магнетронного распыления керамических мишеней на подложке Выявлена высокая управляемость диэлектрической проницаемости тонких слоев под действием приложенного электрического поля при приемлемых для сверхвысокочастотных применений диэлектрических потерях

    The Crystal Structure and Properties of Barium Zirconate Titanate and Barium Stannate Titanate Thin Films for Microwave Applications

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    Structural and radio frequency (RF) dielectric properties of thin films of ferroelectric solid solutions BaZrxTi1-xO3 and BaSnxTi1-xO3 obtained by RF magnetron sputtering of ceramic targets on Pt/ r-cut of Al2O3 sapphire substrate are investigated. A high tunability of thin layers and low values of dielectric loss acceptable for microwave application have been revealed
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