5 research outputs found
Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
Get PDFThe experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured
Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
No full textInvestigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods
No full textAdmittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots
No full textThe experimental results on synthesis of Si/Ge p-i-n structures with Ge quantum dots in the i-region and their investigation by the method of admittance spectroscopy are presented. The activation energies of the emission process from localized states are calculated for two types of structures. Current-voltage characteristics without illumination and under illumination are measured
