Dislocation model for aseismic fault slip in the transverse ranges of Southern California

Geodetic data at a plate boundary can reveal the pattern of subsurface displacements that accompany plate motion. These displacements are modelled as the sum of rigid block motion and the elastic effects of frictional interaction between blocks. The frictional interactions are represented by uniform dislocation on each of several rectangular fault patches. The block velocities and fault parameters are then estimated from geodetic data. Bayesian inversion procedure employs prior estimates based on geological and seismological data. The method is applied to the Transverse Ranges, using prior geological and seismological data and geodetic data from the USGS trilateration networks. Geodetic data imply a displacement rate of about 20 mm/yr across the San Andreas Fault, while the geologic estimates exceed 30 mm/yr. The prior model and the final estimates both imply about 10 mm/yr crustal shortening normal to the trend of the San Andreas Fault. Aseismic fault motion is a major contributor to plate motion. The geodetic data can help to identify faults that are suffering rapid stress accumulation; in the Transverse Ranges those faults are the San Andreas and the Santa Susana

As-Built design specification for PARPLT

The design and implementation of the PARPLT program are described. The program produces scatter plots of the greenness profile derived parameters alpha, beta, and t sub o computed by the CLASFYG program (alpha being the approximate greenness rise time; beta, the greenness decay time; and t sub o, the spectral crop emergence date). Statistical information concerning the parameters is also computed

Controlling the accuracy of unconditionally stable algorithms in Cahn-Hilliard Equation

Given an unconditionally stable algorithm for solving the Cahn-Hilliard equation, we present a general calculation for an analytic time step \d \tau in terms of an algorithmic time step \dt. By studying the accumulative multi-step error in Fourier space and controlling the error with arbitrary accuracy, we determine an improved driving scheme \dt=At^{2/3} and confirm the numerical results observed in a previous study \cite{Cheng1}.Comment: 4 pages, late

Structure-property characterization of rheocast and VADER processed IN-100 superalloy

Two recent solidification processes have been applied in the production of IN-100 nickel-base superalloy: rheocasting and vacuum arc double electrode remelting (VADER). A detailed microstructural examination has been made of the products of these two processes; associated tensile strength and fatigue crack propagation (FCP) rate at an elevated temperature were evaluated. In rheocasting, processing variables that have been evaluated include stirring speed, isothermal stirring time and volume fraction solid during isothermal stirring. VADER processed IN-100 was purchased from Special Metals Corp., New Hartford, NY. As-cast ingots were subjected to hot isostatic pressing (HIP) and heat treatment. Both rheocasting and VADER processed materials yield fine and equiaxed spherical structures, with reduced macrosegregation in comparison to ingot materials. The rheocast structures are discussed on the basis of the Vogel-Doherty-Cantor model of dendrite arm fragmentation. The rheocast ingots evaluated were superior in yield strength to both VADER and commercially cast IN-100 alloy. Rheocast and VADER ingots may have higher crack propagation resistance than P/M processed material

Instantons and the singlet-coupling in the chiral quark model

Chiral quark model with a broken-U(3) flavor symmetry can be interpreted as the effective theory of the instanton-dominated non-perturbative QCD. This naturally suggests the possibility of a negative singlet/octet coupling ratio, which has been found, in a previous publication, to be compatible with the phenomenological description of the nucleon spin-flavor structure.Comment: 9 page

Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy

We have employed ballistic electron emission microscopy (BEEM) to study the energy positions in the conduction band of AlxGa1 – xAs. Epilayers of undoped AlxGa1 – xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The AlxGa1 – xAs layer thickness was varied from 100 to 500 Å to ensure probing of bulk energy levels. Different capping layers and surface treatments were explored to prevent surface oxidation and examine Fermi level pinning at the cap layer/AlxGa1 – xAs interface. All samples were metallized ex situ with a 100 Å Au layer so that the final BEEM structure is of the form Au/capping layer/AlxGa1 – xAs/bulk GaAs. Notably we have measured the Schottky barrier height for Au on AlxGa1 – xAs. We have also probed the higher lying band edges such as the X point at low Al concentrations and the L point at high Al concentrations. Variations of these critical energy positions with Al composition x were mapped out in detail and compared with findings from other studies. Local variations of these energy positions were also examined and found to be on the order of 30–50 meV. The results of this study suggest that BEEM can provide accurate positions for multiple energy levels in a single semiconductor structure