Research Methodologies and Business Discourse Teaching

This chapter will:; ; ; Define English for specific purposes and indicate the specific ways in which it has been influential on business discourse teaching;; ; ; Discuss the most relevant approaches to genre analysis that have been used in business discourse teaching;; ; ; Explore the most relevant approaches to critical discourse analysis and organizational rhetoric for business discourse teaching;; ; ; Identify the most relevant aspects of multimodal discourse analysis for business discourse teaching;; ; ; Provide a case study that illustrates the use of one approach to business discourse teaching, showing how practitioners can incorporate it into their classroom- or consultancy-based ideas

Designing the news : a practitioner perspective on the production values in newspaper sub-editing

This article zooms in on the daily practices of newspaper production journalists. In three semi-structured interviews with sub-editors employed by a Belgian newspaper, I test the practical application of the ‘production values’ I formulated, that is, guidelines that help them ensure accuracy, readability, appeal and credibility of their newspaper. By not only ‘member checking’ previous findings with sub-editors but also including the layout designers’ input on their collaborative process, I re(de)fine my original set of production values. My data suggest that in this particular newsroom the layout designer’s voice can be heard louder than ever. By ‘designing’ the news, sub-editors and layout designers add all-important journalistic value to their publications

A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the 2DEG Resistance in AlGaN/AlN/GaN Heterostructures

International audienceIn this paper, several epitaxial variations influencing the bi-dimensional electron gas (2DEG) are investigated. The effects of n-doped AlGaN barrier and AlN spacer thickness are studied by examining the sheet electron density (ns) and the mobility (µs) of the 2DEG using ID(VG) and C(VG) measurements, and 1D Schrödinger-Poisson (1DSP) simulations. Specifically, the correlations between the resistance, µs, ns and the polarization interface charges (σ) are studied. Besides the well-reported benefits of the AlN spacer on ns, we show that a thicker AlN spacer leads to larger ns due to the enhancement of the AlN polarization. In addition, we prove experimentally that an n-doped AlGaN barrier does not significantly improve the 2DEG density but leads to the formation of a second channel in the AlGaN barrier for negative gate voltage (VG≤0V), driving the overall improvement of the resistance

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT

International audienceFor the first time, ultrafast AC pBTI measurements are applied to GaN on Si E-mode MOSc-HEMT and compared to DC pBTI. Full recess Al$_2$ O$_3$ /GaN MOS gate is submitted to AC signals with various frequencies, duty factors and stress times. The degradation and relaxation characteristics are then modeled through a RC model combined to a CET map and fitted to experimental data. This map reveals the presence of two trap populations, also observed through $\Delta$Vth degradation kinetics. Acceleration factors (gate voltage and temperature) are estimated as well as TTF (Time to Failure) under AC conditions and show an extended lifetime compared to DC stress conditions. Finally dynamic variability is studied and indicates that our devices are ruled by normal distributions

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT

In this study, we investigate the difference between ID(VG) and C(VG) pBTI shifts on GaN-on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (VGStress) and temperatures (T). A new experimental setup using ultra-fast and simultaneous ID(VG) and C(VG) measurements enables to monitor the threshold voltage VTHdrift through two metrics, \u394 VTHI and \u394VTHC. Experimental pBTI results depict a difference between \u394 VTHI and \u394 VTHC, such as \u394 VTHI < \u394 VTHC. TCAD simulations support that ID(VG) shift (\u394 VTHI) is related to charge trapping in Al2O3gate oxide defects at the gate corners regions while C(VG) shift (\u394 VTHC) is mainly ascribed to the gate bottom, due to the presence of a back-barrier layer in the epitaxy. These previous results enable to deduce that the Al2O3defects density is more important at the gate corners than at the gate bottom

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

In this paper, we investigate the influence of negative gate stress on threshold voltage VTH instabilities in GaN-on-Si devices. This study has been carried out by using ultra-fast Measurement-Stress-Measurement (MSM) procedure on GaN-on-Si E-mode MOSc-HEMTs (Enhancement-mode MOS-channel HEMTs) for different gate lengths LG. NBTI transients at different temperatures and complementary ToF-SIMS analysis reveal the influence of two trap populations involved on VTH instabilities, both of them are related to the CN acceptor traps. The first one is close to the interface between GaN and Al2O3 gate oxide due to N-vacancies induced by the dry etching process, the second one is likely to be related to GaN:C layer. NBTI transients also exhibit a dependence with LG, which is consistent with the E-field distribution of the gate region obtained by TCAD simulations at different gate stress voltages, and confirm the proximity of a CN trap population to the gate oxide

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

In this article, threshold-voltage VTH instabilities under positive gate voltage stress VGStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress-measurement pBTI technique using ultrafast VG ramp was applied in this study. PBTI transients performed at different VGStress and several temperatures highlight the influence of two trap populations, one being related to Al2O3 gate oxide defects and the other one to CN acceptors in GaN lattice. Both trap populations are located close to the Al2O3/GaN interface and lead to VTH instabilities via two different underlying mechanisms simulated by TCAD. PBTI transients obtained under several dc and ac stress conditions have also been modeled using capture emission time (CET) maps and allowed the identification of the two trap populations. Analysis of the temperature-dependent CET maps gives an activation energy of 0.8-0.9 eV related to CN traps and an energy range between 0.7 and 1.5 eV ascribed to Al2O3 defects above the GaN conduction band energy. This study provides a better understanding of the underlying physical mechanisms, leading to BTI degradation in GaN-HEMT technologies