52 research outputs found

    Research Methodologies and Business Discourse Teaching

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    This chapter will:; ; ; Define English for specific purposes and indicate the specific ways in which it has been influential on business discourse teaching;; ; ; Discuss the most relevant approaches to genre analysis that have been used in business discourse teaching;; ; ; Explore the most relevant approaches to critical discourse analysis and organizational rhetoric for business discourse teaching;; ; ; Identify the most relevant aspects of multimodal discourse analysis for business discourse teaching;; ; ; Provide a case study that illustrates the use of one approach to business discourse teaching, showing how practitioners can incorporate it into their classroom- or consultancy-based ideas

    Designing the news : a practitioner perspective on the production values in newspaper sub-editing

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    This article zooms in on the daily practices of newspaper production journalists. In three semi-structured interviews with sub-editors employed by a Belgian newspaper, I test the practical application of the ‘production values’ I formulated, that is, guidelines that help them ensure accuracy, readability, appeal and credibility of their newspaper. By not only ‘member checking’ previous findings with sub-editors but also including the layout designers’ input on their collaborative process, I re(de)fine my original set of production values. My data suggest that in this particular newsroom the layout designer’s voice can be heard louder than ever. By ‘designing’ the news, sub-editors and layout designers add all-important journalistic value to their publications

    Evaluation of mobile laser scanning acquisition scenarios for automated wood volume estimation in a temperate hardwood forest using Quantitative Structural Models

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    This study explores how data from a handheld mobile laser scanning (MLS) system and quantitative structural models (QSM) can be used to estimate tree structural attributes. Four MLS acquisition scenarios were investigated in a 1-ha temperate hardwood stand, including 15 m and 35 m parallel lines, nine circular plots, and a 20 m × 20 m grid. Results were compared against terrestrial laser scanning and destructive field measurements. All acquisition scenarios yielded comparable results, except for the 35 m scenario, which showed greater variability. The 20 m × 20 m grid scenario showed the highest accuracy, with a RMSE of 0.41 m (2.07%) for tree height, 3.98 cm (14.93%) for diameter at breast height, 0.21 m³ (19.28%) for merchantable wood volume, and 0.07 m³ (10.11%) for merchantable stem volume. A biasThe presentation of the authors' names and (or) special characters in the title of the pdf file of the accepted manuscript may differ slightly from what is displayed on the item page. The information in the pdf file of the accepted manuscript reflects the original submission by the author

    Estimation of Northern Hardwood Forest Inventory Attributes Using UAV Laser Scanning (ULS): Transferability of Laser Scanning Methods and Comparison of Automated Approaches at the Tree- and Stand-Level

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    UAV laser scanning (ULS) has the potential to support forest operations since it provides high-density data with flexible operational conditions. This study examined the use of ULS systems to estimate several tree attributes from an uneven-aged northern hardwood stand. We investigated: (1) the transferability of raster-based and bottom-up point cloud-based individual tree detection (ITD) algorithms to ULS data; and (2) automated approaches to the retrieval of tree-level (i.e., height, crown diameter (CD), DBH) and stand-level (i.e., tree count, basal area (BA), DBH-distribution) forest inventory attributes. These objectives were studied under leaf-on and leaf-off canopy conditions. Results achieved from ULS data were cross-compared with ALS and TLS to better understand the potential and challenges faced by different laser scanning systems and methodological approaches in hardwood forest environments. The best results that characterized individual trees from ULS data were achieved under leaf-off conditions using a point cloud-based bottom-up ITD. The latter outperformed the raster-based ITD, improving the accuracy of tree detection (from 50% to 71%), crown delineation (from R2 = 0.29 to R2 = 0.61), and prediction of tree DBH (from R2 = 0.36 to R2 = 0.67), when compared with values that were estimated from reference TLS data. Major improvements were observed for the detection of trees in the lower canopy layer (from 9% with raster-based ITD to 51% with point cloud-based ITD) and in the intermediate canopy layer (from 24% with raster-based ITD to 59% with point cloud-based ITD). Under leaf-on conditions, LiDAR data from aerial systems include substantial signal occlusion incurred by the upper canopy. Under these conditions, the raster-based ITD was unable to detect low-level canopy trees (from 5% to 15% of trees detected from lower and intermediate canopy layers, respectively), resulting in a tree detection rate of about 40% for both ULS and ALS data. The cylinder-fitting method used to estimate tree DBH under leaf-off conditions did not meet inventory standards when compared to TLS DBH, resulting in RMSE = 7.4 cm, Bias = 3.1 cm, and R2 = 0.75. Yet, it yielded more accurate estimates of the BA (+3.5%) and DBH-distribution of the stand than did allometric models −12.9%), when compared with in situ field measurements. Results suggest that the use of bottom-up ITD on high-density ULS data from leaf-off hardwood forest leads to promising results when estimating trees and stand attributes, which opens up new possibilities for supporting forest inventories and operations.</jats:p

    A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the 2DEG Resistance in AlGaN/AlN/GaN Heterostructures

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    International audienceIn this paper, several epitaxial variations influencing the bi-dimensional electron gas (2DEG) are investigated. The effects of n-doped AlGaN barrier and AlN spacer thickness are studied by examining the sheet electron density (ns) and the mobility (µs) of the 2DEG using ID(VG) and C(VG) measurements, and 1D Schrödinger-Poisson (1DSP) simulations. Specifically, the correlations between the resistance, µs, ns and the polarization interface charges (σ) are studied. Besides the well-reported benefits of the AlN spacer on ns, we show that a thicker AlN spacer leads to larger ns due to the enhancement of the AlN polarization. In addition, we prove experimentally that an n-doped AlGaN barrier does not significantly improve the 2DEG density but leads to the formation of a second channel in the AlGaN barrier for negative gate voltage (VG≤0V), driving the overall improvement of the resistance

    Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

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    International audienceIn this article, the impact of device architecture on threshold voltage VTH instabilities during OFF state operation under a high drain voltage stress on GaN-on-Si MOSc HEMTs is thoroughly investigated. Measurement-stress–measurement high-voltage bias temperature instability (HVBTI) technique using ultrafast VGS ramp was used in this study. This measurement technique was carried out on various gate length ( LG ), ohmic length (LOHM), and field plate (FP) length. HVBTI transients performed at different LG highlight that increasing the gate length induces a better electrostatic control under the gate via a gate shielding. TCAD simulations support the claim that the relaxation peak is linked to the charge redistribution of ionized CN (-) traps under the gate. This charge redistribution during the relaxation phase is enhanced using a larger ohmic contact area. The electric field at gate and source FP corners has a strong impact on ionized CN acceptor traps located in the GaN:C layer close to the gate and consequently on positive VTH degradation observed for short stress duration. Substrate biasing and TCAD simulations suggest that the CN traps’ deionization and trapping in the volume of the gate oxide is related to the presence of free holes in the GaN:C layer
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