Vortex oscillations induced by a spin-polarized current in a magnetic nanopillar: Evidence for a failure of the Thiele approach

We investigate the vortex excitations induced by a spin-polarized current in a magnetic nanopillar by means of micromagnetic simulations and analytical calculations. Damped motion, stationary vortex rotation and the switching of the vortex core are successively observed for increasing values of the current. We demonstrate that even for small amplitude of the vortex motion, the analytical description based the classical Thiele approach can yield quantitatively and qualitatively unsound results. We suggest and validate a new analytical technique based on the calculation of the energy dissipation

Critical velocity for the vortex core reversal in perpendicular bias magnetic field

For a circular magnetic nanodot in a vortex ground state we study how the critical velocity $v_c$ of the vortex core reversal depends on the magnitude $H$ of a bias magnetic field applied perpendicularly to the dot plane. We find that, similarly to the case $H$ = 0, the critical velocity does not depend on the size of the dot. The critical velocity is dramatically reduced when the negative (i.e. opposite to the vortex core direction) bias field approaches the value, at which a \emph{static} core reversal takes place. A simple analytical model shows good agreement with our numerical result.Comment: 4 pages, 2 figure

Large microwave generation from d.c. driven magnetic vortex oscillators in magnetic tunnel junctions

Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a nanometer scale, CMOS compatible and tunable microwave generator operating at low bias for future wireless communications. Microwave emission generated by the persitent motion of magnetic vortices induced by spin transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, where such vortex oscillations have been observed, the resulting microwave power is much too small. Here we present experimental evidences of spin-transfer induced core vortex precessions in MgO-based magnetic tunnel junctions with similar good spectral quality but an emitted power at least one order of magnitude stronger. More importantly, unlike to others spin transfer excitations, the thorough comparison between experimental results and models provide a clear textbook illustration of the mechanisms of vortex precessions induced by spin transfer

High domain wall velocities due to spin currents perpendicular to the plane

We consider long and narrow spin valves composed of a first magnetic layer with a single domain wall (DW), a normal metal spacer and a second magnetic layer that is a planar or a perpendicular polarizer. For these structures, we study numerically DW dynamics taking into account the spin torques due to the perpendicular spin currents. We obtain high DW velocities: 50 m/s for planar polarizer and 640 m/s for perpendicular polarizer for J = 5*10^6 A/cm^2. These values are much larger than those predicted and observed for DW motion due to the in-plane spin currents. The ratio of the magnitudes of the torques, which generate the DW motion in the respective cases, is responsible for these large differences.Comment: 10 pages, 2 figure

Spin torque resonant vortex core expulsion for an efficient radio-frequency detection scheme

Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction. When the excitation radius of the vortex core is greater than that of the junction radius, vortex core expulsion is observed, leading to a large change in resistance, as the layer enters a predominantly uniform magnetisation state. Unlike the conventional spin-torque diode effect, this highly tunable resonant effect will generate a voltage which does not decrease as a function of rf power, and has the potential to form the basis of a new generation of tunable nanoscale radio-frequency detectors

Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices

Magnetic stray fields in nanoscale magnetic tunnel junctions

The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications where the free layer can exhibit bias. Using atomistic dipole-dipole calculations we numerically simulate the stray magnetic field emanating from the magnetic layers of a magnetic memory device with different geometries. We find that edge effects dominate the overall stray magnetic field in patterned devices and that a conventional synthetic antiferromagnet structure is only partially able to compensate the field at the free layer position. A granular reference layer is seen to provide near-field flux closure while additional patterning defects add significant complexity to the stray field in nanoscale devices. Finally we find that the stray field from a nanoscale antiferromagnet is surprisingly non-zero arising from the imperfect cancellation of magnetic sublattices due to edge defects. Our findings provide an outline of the role of different layer structures and defects in the effective stray magnetic field in nanoscale magnetic random access memory devices and atomistic calculations provide a useful tools to study the stray field effects arising from a wide range of defects