Mass spectral analysis and quantification of Secondary Ion Mass Spectrometry data

This work highlights the possibility of improving the quantification aspect of Cs-complex ions in SIMS (Secondary Ion Mass Spectrometry), by combining the intensities of all possible Cs-complexes. Identification of all possible Cs-complexes requires quantitative analysis of mass spectrum from the material of interest. The important steps of this mass spectral analysis include constructing fingerprint mass spectra of the constituent species from the table of isotopic abundances of elements, constructing the system(s) of linear equations to get the intensities of those species, solving them, evaluating the solutions and employing a regularization process when required. These steps are comprehensively described and the results of their application on a SIMS mass spectrum obtained from D9 steel are presented. It is demonstrated that results from the summation procedure, which covers entire range of sputtered clusters, is superior to results from single Cs-complex per element. The result of employing a regularization process in solving a mass spectrum from an SS316LN steel specimen is provided to demonstrate the necessity of regularization.Comment: 10 pages, 3 figures; added reference for section "Theory", a few sentences modified for clarit

Oxygen consumption changes with yoga practices: A systematic review

Oxygen consumption varies with physical and mental activity as well as pathological conditions. Although there is a strong relationship between yoga and metabolic parameters, the relationship between yoga and oxygen consumption has not yet been formally reviewed. This systematic review attempted to include all studies of yoga that also measured oxygen consumption or metabolic rate as an outcome. A total of 58 studies were located involving between 1 and 104 subjects (average 21). The studies were generally of poor methodological quality and demonstrated great heterogeneity with different experimental designs, yoga practices, time periods, and small sample sizes. Studies report yoga practices to have profound metabolic effects producing both increase and decrease in oxygen consumption, ranging from 383% increase with cobra pose to 40% decrease with meditation. Compared to nonpractitioners, basal oxygen consumption is reported to be up to 15% less in regular yoga practitioners, and regular yoga practice is reported to have a training effect with oxygen consumption during submaximal exercise decreasing by 36% after 3 months. Yoga breathing practices emphasize breathing patterns and retention ratios as well as unilateral nostril breathing, and these factors appear critical in influencing oxygen consumption. A number of studies report extraordinary volitional control over metabolism in advanced yoga practitioners who appear to be able to survive extended periods in airtight pits and to exceed the limits of normal human endurance. More rigorous research with standardized practices is required to determine the mechanisms of yoga's metabolic effects and the relevance of yoga practices in different clinical populations

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In the present study, we have grown the GaN nanowires at a temperature, as low as 700 ^oC. Role of indium in the reduction of growth temperature is discussed in the ambit of Raoult's law. Indium is used to increase the vapor pressure of the Ga sufficiently to evaporate even at low temperature initiating the growth of GaN nanowires. In addition to the studies related to structural and vibrational properties, optical properties of the grown nanowires are also reported for detailed structural analysis.Comment: 24 pages, 7 figures, journa

Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.Comment: 42 pages, 6 figures, Journa