Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

We present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgapInSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction.This work was carried out within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation

Assessment of human influenza pandemic scenarios in Europe

The response to the emergence of the 2009 influenza A(H1N1) pandemic was the result of a decade of pandemic planning, largely centred on the threat of an avian influenza A(H5N1) pandemic. Based on a literature review, this study aims to define a set of new pandemic scenarios that could be used in case of a future influenza pandemic. A total of 338 documents were identified using a searching strategy based on seven combinations of keywords. Eighty-three of these documents provided useful information on the 13 virus-related and health-system-related parameters initially considered for describing scenarios. Among these, four parameters were finally selected (clinical attack rate, case fatality rate, hospital admission rate, and intensive care admission rate) and four different levels of severity for each of them were set. The definition of six most likely scenarios results from the combination of four different levels of severity of the four final parameters (256 possible scenarios). Although it has some limitations, this approach allows for more flexible scenarios and hence it is far from the classic scenarios structure used for pandemic plans until 2009

Electronic structure of strained InP/GaInP quantum dots

We calculate the electronic structure of nm scale InP islands embedded in $Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.Comment: Typographical error corrected in strain Hamiltonia

Optical properties and morphology of InAs ∕ InP (113)B surface quantum dots

We report on long-wavelength photoluminescence(PL) emission at room temperature from self-organized InAssurfacequantum dotsgrown by gas-source molecular beam epitaxy on a GaInAsP∕InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surfacequantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k⋅p theory in the envelope function approximation.This work was supported by the SANDIE European Network of Excellence

Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.Comment: 4 pages, 4 figure

Optimization of supply diversity for the self-assembly of simple objects in two and three dimensions

The field of algorithmic self-assembly is concerned with the design and analysis of self-assembly systems from a computational perspective, that is, from the perspective of mathematical problems whose study may give insight into the natural processes through which elementary objects self-assemble into more complex ones. One of the main problems of algorithmic self-assembly is the minimum tile set problem (MTSP), which asks for a collection of types of elementary objects (called tiles) to be found for the self-assembly of an object having a pre-established shape. Such a collection is to be as concise as possible, thus minimizing supply diversity, while satisfying a set of stringent constraints having to do with the termination and other properties of the self-assembly process from its tile types. We present a study of what we think is the first practical approach to MTSP. Our study starts with the introduction of an evolutionary heuristic to tackle MTSP and includes results from extensive experimentation with the heuristic on the self-assembly of simple objects in two and three dimensions. The heuristic we introduce combines classic elements from the field of evolutionary computation with a problem-specific variant of Pareto dominance into a multi-objective approach to MTSP.Comment: Minor typos correcte

Interface electronic states and boundary conditions for envelope functions

The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functions is derived using the Hermiticity and symmetry requirements. Empirical coefficients in the connection rules play role of material parameters which characterize an internal structure of every particular heterointerface. As an illustration we present the derivation of the most general connection rules for the one-band effective mass and 4-band Kane models. The conditions for the existence of Tamm-like localized interface states are established. It is shown that a nontrivial form of the connection rules can also result in the formation of resonant states. The most transparent manifestation of such states is the resonant tunneling through a single-barrier heterostructure.Comment: RevTeX4, 11 pages, 5 eps figures, submitted to Phys.Rev.

Sub-microsecond correlations in photoluminescence from InAs quantum dots

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure