Modeling of conduction properties of Schottky diodes in Polymer

This work deals with the modeling of experimental current-voltage (I-V) characteristics according to the temperature of P type Schottky diode in polymers. The results obtained show that conduction in the fabricated structures depends on temperature and bias the mode (forward or reverse). Under reverse bias, current increases significantly with temperature. This is due to the thermoionic conduction, affected by the lowering of the potential barrier at the metal /polymer interface due to the image charge effect. The analysis of current-voltage characteristics has enabled us to derive the saturation current and, also, the potential barrier at the metal/polymer interface according to temperature. It has been shown that the value of this barrier without image charge effect, is in the order of 0. 3eV. Under forward bias, current increases with temperature. It is of the thermoionic type at low voltage (-0.4 Volt<V< 0 Volt). It has been shown that the values of the ideality factor depend very little on temperature: varying from 1.5 to 4. However, saturation current increases with temperature: when temperature increases by approximately 6%, current increases by 20%. The values of saturation current for temperatures in excess of 200°K are confirmed by the values found in reverse bias. For temperatures less than 200°K, saturation currents in reverse mode are important relative to that obtained in forward mode. This is attributed to the electrical properties of polymer at low temperatures in reverse mode. At high voltages (V<-0.4 Volt), the current is attributed to the resistance effect of polymer. This resistance is evidenced by the high current and drops with temperature. Its analysis has allowed us to derive the mobility of the carrier charges: when temperature varies from 105°K to 425°K, mobility varies from 3 10-5(cm2V-1S-1) to 7 10-5(cm2V-1S-1).This work deals with the modeling of experimental current-voltage (I-V) characteristics according to the temperature of P type Schottky diode in polymers. The results obtained show that conduction in the fabricated structures depends on temperature and bias the mode (forward or reverse). Under reverse bias, current increases significantly with temperature. This is due to the thermoionic conduction, affected by the lowering of the potential barrier at the metal /polymer interface due to the image charge effect. The analysis of current-voltage characteristics has enabled us to derive the saturation current and, also, the potential barrier at the metal/polymer interface according to temperature. It has been shown that the value of this barrier without image charge effect, is in the order of 0. 3eV. Under forward bias, current increases with temperature. It is of the thermoionic type at low voltage (-0.4 Volt<V< 0 Volt). It has been shown that the values of the ideality factor depend very little on temperature: varying from 1.5 to 4. However, saturation current increases with temperature: when temperature increases by approximately 6%, current increases by 20%. The values of saturation current for temperatures in excess of 200°K are confirmed by the values found in reverse bias. For temperatures less than 200°K, saturation currents in reverse mode are important relative to that obtained in forward mode. This is attributed to the electrical properties of polymer at low temperatures in reverse mode. At high voltages (V<-0.4 Volt), the current is attributed to the resistance effect of polymer. This resistance is evidenced by the high current and drops with temperature. Its analysis has allowed us to derive the mobility of the carrier charges: when temperature varies from 105°K to 425°K, mobility varies from 3 10-5(cm2V-1S-1) to 7 10-5(cm2V-1S-1)

Ionizing Radiation Effect on the Electrical Properties of Metal/ultra-thin Oxide/Semiconductor Structures

This paper deals with the effects of X-ray radiation (7 Mrad (Si) dose) on the electrical properties of Metal/Oxide/Semiconductor (MOS) structures with ultra thin oxide layer (45 Å to 80 Å), P-type semiconductor (Si), and a chromium gate. These effects are investigated on the Fowler-Nordheim (FN) conduction and the excess current when the MOS structure is biased with a positive gate voltage (Vg>0) (inversion regime); and on the breakdown field when electrons are injected from the metal (accumulation regime, Vg0) (inversion regime); and on the breakdown field when electrons are injected from the metal (accumulation regime, Vg<0). By using the theoretical conduction model developed in a previous paper [1], we have found that the FN conduction parameters improve after radiation. We have interpreted this result, by modelling the excess current before and after radiation, by improving the conduction parameters of defects localized in the oxide layer. Thus the defect barrier was increased by 6.5% while the effective area decreased by 68%. The analysis of the radiation effect on breakdown distribution shows the degradation of the breakdown field after radiation. These results suggest that the ionising radiation can be involved in the formation of another type of defects in the oxide layer that can lead to the breakdown phenomenon but cannot impact the FN conduction mechanism

Evaluation of 1,4-Benzothiazines in Steel Corrosion Inhibition in 15% HCl: Experimental and Theoretical Perspectives

Corrosion inhibitors are essential for metal protection. In this study, the efficacy of 1,4-Benzothiazine derivatives, particularly ethyl 3-hydroxy-2-(p-tolyl)-3,4-dihydro-2H-benzo[b][1,4]thiazine-3-carboxylate (EHBT) and 2-(4-chlorophenyl)-1,4-benzothiazin-3-one (CBT), was examined for carbon steel corrosion inhibition in 15 wt.% HCl. Techniques such as Electrochemical Impedance Spectroscopy (EIS), Potentiodynamic Polarization (PDP), weight loss measurement, and Scanning Electron Microscopy assessed the inhibitors' performance. Results showed inhibitor efficiency increased with concentration, with CBT and EHBT achieving up to 97% and 98% effectiveness respectively. Both acted as mixed inhibitors, reducing anodic and cathodic reactions. Adsorption of these molecules onto the steel surface was consistent with the Langmuir isotherm model, suggesting physical and chemical interaction. SEM analysis confirmed the protective layer formation by 1,4-Benzothiazine derivatives. Additionally, Quantum Chemical Calculations and Molecular Dynamics simulations provided insights into their interaction mechanisms on the Fe(110) surface. This research highlights the potential of 1,4-Benzothiazine derivatives in corrosion protection and paves the way for their further development