Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates

InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides

Single pairs of time-bin-entangled photons

Time-bin-entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates, at most, one time-bin-entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are then converted, without loss of entanglement strength, into single time-bin-entangled photon pairs

Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate

Impact of DWDM at 50GHz spacing in the 2µm waveban

In this paper, we show for the first time the impact of decreasing DWDM channel spacing to 50GHz in the 2mm waveband, using 6x12.5Gbit/s and 2x8Gbit/s OOK signals

On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

The effective electron mobility of In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors with HfO2 gate oxide was measured over a wide range of channel doping concentration. The back bias dependence of effective electron mobility was used to correctly calculate the vertical effective electric field. The effective electron mobility at moderate to high vertical effective electric field shows universal behavior independent of substrate impurity concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3588255

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

AlInAs microdisk cavities having quality factor Q ~ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements

Low-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolators

On-chip optical interconnects heterogeneously integrated on silicon wafers by transfer-print technology are presented for the first time. Thin (250 and current transfer ratio of 0.1% in a compact volume of  <0.0004 mm3 are demonstrated. Experiment shows that the polymer waveguide between the LED and PD plays a key role in enhancing the data transmission efficiency. Reciprocal performance for bidirectional transmission is also achieved. The results show the potential for cost-effective and low profile form-factor on-chip opto-isolators

On-chip optical interconnect on silicon by transfer printing

On-chip optical interconnects consisting of transfer-printed micro-LEDs and photodiodes are presented. Static and dynamic data transmission and bi-directional interconnect are demonstrated. The results show the potential for cost-effective and small form-factor on-chip opto-isolators