8 research outputs found
Doping of the Wide-Gap Semiconductor CdMgTe During Molecular Beam Epitaxy
We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state
Mitochondrial DNA deletions and transcription profiles of different brain regions from patients with Alzheimer´s disease at single cell level
Rare loss-of-function mutation in SERPINA3 in generalized pustular psoriasis
Letter to the Edito