Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature

Floating-Gate MOS Synapse Transistors

Our goal is to develop silicon learning systems. One impediment to achieving this goal has been the lack of a simple circuit element combining nonvolatile analog memory storage with locally computed memory updates. Existing circuits [63, 132] typically are large and complex; the nonvolatile floating-gate devices, such as EEPROM transistors. typically are optimized for binary-valued storage [17], and do not compute their own memory updates. Although floating-gate transistors can provide nonvolatile analog storage [1, 15], because writing the memory entails the difficult process of moving electrons through Si0_2, these devices have not seen wide use as memory elements in silicon learning systems

The matching of small capacitors for analog VLSI

The capacitor has become the dominant passive component for analog circuits designed in standard CMOS processes. Thus, capacitor matching is a primary factor in determining the precision of many analog circuit techniques. In this paper, we present experimental measurements of the mismatch between square capacitors ranging in size from 6 μm×6 μm to 20 μm×20 μm fabricated in a standard 2 μm double-poly CMOS process available through MOSIS. For a size of 6 μm×6 μm, we have found that those capacitors that fell within one standard deviation of the mean matched to better than 1%. For the 20 μm×20 μm size, we observed that those capacitors that fell within 1 standard deviation of the mean matched to about 0.2%. Finally, we observed the effect of nonidentical surrounds on capacitor matching

A floating-gate MOS learning array with locally computed weight updates

We have demonstrated on-chip learning in an array of floating-gate MOS synapse transistors. The array comprises one synapse transistor at each node, and normalization circuitry at the row boundaries. The array computes the inner product of a column input vector and a stored weight matrix. The weights are stored as floating-gate charge; they are nonvolatile, but can increase when we apply a row-learn signal. The input and learn signals are digital pulses; column input pulses that are coincident with row-learn pulses cause weight increases at selected synapses. The normalization circuitry forces row synapses to compete for floating-gate charge, bounding the weight values. The array simultaneously exhibits fast computation and slow adaptation: The inner product computes in 10 μs, whereas the weight normalization takes minutes to hours

A νMOS soft-maximum current mirror

In this paper, we describe a novel circuit consisting of N+1 MOS transistors and a single floating gate which computes a soft maximum of N current inputs and reflects the result in the output transistor. An intuitive description of the operation of the circuit is given. Data from a working two-input version of the circuit is presented and discussed. The circuit features a high output voltage swing and an interesting feedback mechanism which causes its output impedance to be comparable to that of a normal MOS transistor despite the fact that the output device is a floating-gate transistor

Studies on the Basis for the Properties of Fibrin Produced from Fibrinogen-Containing γ′ Chains

Human fibrinogen 1 is homodimeric with respect to its γ chains (`γA-γA\u27), whereas fibrinogen 2 molecules each contain one γA (γA1-411V) and one γ\u27 chain, which differ by containing a unique C-terminal sequence from γ\u27408 to 427L that binds thrombin and factor XIII. We investigated the structural and functional features of these fibrins and made several observations. First, thrombin-treated fibrinogen 2 produced finer, more branched clot networks than did fibrin 1. These known differences in network structure were attributable to delayed release of fibrinopeptide (FP) A from fibrinogen 2 by thrombin, which in turn was likely caused by allosteric changes at the thrombin catalytic site induced by thrombin exosite 2 binding to the γ\u27 chains. Second, cross-linking of fibrin γ chains was virtually the same for both types of fibrin. Third, the acceleratory effect of fibrin on thrombin-mediated XIII activation was more prominent with fibrin 1 than with fibrin 2, and this was also attributable to allosteric changes at the catalytic site induced by thrombin binding to γ\u27 chains. Fourth, fibrinolysis of fibrin 2 was delayed compared with fibrin 1. Altogether, differences between the structure and function of fibrins 1 and 2 are attributable to the effects of thrombin binding to γ\u27 chains

Scaling pFET Hot-Electron Injection

This paper' elaborates on a previously introduced [l] analytical model for hot-electron injection in pchannel MOSFET's. Hot-electron injection is frequently exploited to remove stored charge in floating-gate circuits. As illustrated in We present data from devices fabricated on processes with minimum channel lengths of 2pm, l p m , 0.5pm, 0.35pm, 0.25pm, O.lSpm, and 0.13pm, modeling these devices analytically in each process. While we can derive the mean free length between phonon collisions, A, using the well known energy of optical phonons in silicon [4], we must provide a theoretical model and experiniental verification of the energy dependence of the mean free lengths between impact-ionization events in the conduction and valence bands, & ( E ) and &+(E)

Intensive care unit sinks are persistently colonized with multidrug resistant bacteria and mobilizable, resistance-conferring plasmids

Contamination of hospital sinks with microbial pathogens presents a serious potential threat to patients, but our understanding of sink colonization dynamics is largely based on infection outbreaks. Here, we investigate the colonization patterns of multidrug-resistant organisms (MDROs) in intensive care unit sinks and water from two hospitals in the USA and Pakistan collected over 27 months of prospective sampling. Using culture-based methods, we recovered 822 bacterial isolates representing 104 unique species and genomospecies. Genomic analyses revealed long-term colonization b

Financial crises and the attainment of the SDGs: an adjusted multidimensional poverty approach

This paper analyses the impact of financial crises on the Sustainable Development Goal of eradicating poverty. To do so, we develop an adjusted Multidimensional Poverty Framework (MPF) that includes 15 indicators that span across key poverty aspects related to income, basic needs, health, education and the environment. We then use an econometric model that allows us to examine the impact of financial crises on these indicators in 150 countries over the period 1980–2015. Our analysis produces new estimates on the impact of financial crises on poverty’s multiple social, economic and environmental aspects and equally important captures dynamic linkages between these aspects. Thus, we offer a better understanding of the potential impact of current debt dynamics on Multidimensional Poverty and demonstrate the need to move beyond the boundaries of SDG1, if we are to meet the target of eradicating poverty. Our results indicate that the current financial distress experienced by many low-income countries may reverse the progress that has been made hitherto in reducing poverty. We find that financial crises are associated with an approximately 10% increase of extreme poor in low-income countries. The impact is even stronger in some other poverty aspects. For instance, crises are associated with an average decrease of government spending in education by 17.72% in low-income countries. The dynamic linkages between most of the Multidimensional Poverty indicators, warn of a negative domino effect on a number of SDGs related to poverty, if there is a financial crisis shock. To pre-empt such a domino effect, the specific SDG target 17.4 on attaining long-term debt sustainability through coordinated policies plays a key role and requires urgent attention by the international community