This paper' elaborates on a previously introduced [l] analytical model for hot-electron injection in pchannel MOSFET's. Hot-electron injection is frequently exploited to remove stored charge in floating-gate circuits. As illustrated in We present data from devices fabricated on processes with minimum channel lengths of 2pm, l p m , 0.5pm, 0.35pm, 0.25pm, O.lSpm, and 0.13pm, modeling these devices analytically in each process. While we can derive the mean free length between phonon collisions, A, using the well known energy of optical phonons in silicon [4], we must provide a theoretical model and experiniental verification of the energy dependence of the mean free lengths between impact-ionization events in the conduction and valence bands, & ( E ) and &+(E)
