Low defect, high purity crystalline layers grown by selective deposition

The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities

The impact of voluntary environmental protection instruments on company environmental performance

In the last decade there has been increasing emphasis on the use of voluntary environmental protection tools such as corporate environmental reporting (CER) and environmental management systems (EMSs). There has been relatively little research, however, on the impact of these tools on the actual environmental performance of companies. This paper presents the findings of a survey of 40 companies operating in Western Australia to determine the extent to which the implementation of two voluntary instruments has influenced company environmental performance. The research considered four questions: To what extent have CER and EMSs influenced the environmental performance of companies operating in Western Australia? What are the characteristics of these influences? How does the influence of EMSs on environmental performance compare to that of CER? Have other external factors concurrently influenced environmental performance? In general, most respondents indicated that EMSs had influenced environmental management practices to some extent. On the other hand, CER was seen more as a public relations exercise and had less impact on company practices compared with EMSs. Other factors that influenced environmental performance included pressure from clients, senior management, the public and regulators; corporate culture; and cost savings

Petrogenesis of calcic plagioclase megacrysts in Archean rocks

Anorthositic complexes with large equidimensional plagioclase grains of highly calcic composition occur in nearly all Archean cratons. Similar plagioclase occur as megacrysts in many Archean sills, dikes, and volcanic flows. In the Canadian Shield these units occur throughout the Archean portions of the entire shield and are particularly common as dikes over an area of a few 100,000 sq km in Ontario and Manitoba during a period of at least 100 m.y. in many different rock types and metamorphic grades. The plagioclase generally occurs in three modes: as inclusions in mafic intrusions at various stages of fractionation, as crystal segregations in anorthosite complexes, or as megacrysts in fractionated sills, dikes, and flows. Most occurrences suggest that the plagioclase was formed elsewhere before being transported to its present location. The evidence seems to be quite clear that occurrences of these types of calcic plagioclase require: (1) ponding of a relatively undifferentiated Archean tholeiitic melt at some depth; (2) isothermal crystallization of large, equidimensional homogeneous plagioclase crystals; (3) separation of the plagioclase crystals from any other crystalline phases; (4) further fractionation of melt; (5)transport of various combinations of individual plagioclase crystals and clusters of crystals by variously fractionated melts; and (6) emplacement as various types of igneous intrusions or flows

Archaean megacrystic plagioclase units and the tectonic setting of greenstones

Large (up to 20 cm), equidimensional, commonly euhedral, plagioclase megacrysts of highly calcic composition (An sub 80-90) occur commonly in all Archean cratons in one or more of three distinct associations: (1) as cumulate crystal segregations of anorthosite or as megacrysts in basaltic dikes, sills, and flows in greenstone belts that vary in metamorphic grade from greenschist to granulite. Throughout 100's of thousands of square kilometers of northwestern Ontario and Manitoba the plagioclase megacrysts occur in pillowed and massive flows, sills, dikes, large inclusions in dikes, and intrusive anorthositic complexes with areas of up to a few 100 sq km and spanning a period of at least 100 m.y. in the 2.7 to 2.8 b.y. time frame; (2) as basaltic dike swarms in stable cratonic areas forming parallel to subparallel patterns over hundreds of thousands of square kilometers intruding both granitic gneisses and supracrustal belts including greenstones. These swams include the Ameralik-Saglek system at 3.1 to 3.4 b.y., the Matachewan system at 2.5 to 2.6 b.y., and the Beartooth-Bighorn system at 2.2 to 2.3 b.y.; and, (3) as anorthositic complexes associated with marbles and quartzites (Sittampundi, India and Messina, South Africa) in granulite grade terrains. Initial attempts to correlate tectonic settings of similar modern crystbearing units with their Archean counterparts were only partially successful

The Petrogenetic significance of Plagioclase megacrysts in Archean rocks

The petrogenetic significance of plagioclase megacryst-bearing Archean rocks was considered. It was suggested that these developed in mid-to upper-crustal magma chambers that were repeatedly replenished. Crystallization of megacrysts from a primitive liquid that evolves to an Fe-rich tholeiite (with LREE enrichment) is nearly isothermal and is an equilibrium process. Cumulates probably form near the margins of the chambers and liquids with megacrysts are periodically extracted and can appear as volcanics. Some flows and intrusives are found in arc-like settings in greenstone belts. Megacrystic dikes represent large volumes of melt and dike swarms such as the Metachawan swarm of Ontario suggest multiple sources of similar compositions. A complex series of melt ponding and migration are probable and involve large amounts of liquid