The Change of Korean rural settlement functions in the latter half of the 20th century

학위논문(박사)--서울대학교 대학원 :협동과정 조경학 도시·환경설계전공,1998.Docto

The Vascularization Effect of Freunds Adjuvants and its Components in Rabbits

The original Freunds Adjuvant is a water-in-paraffin- oil emulsion, which has been used for the purpose of enhancing antibody production; but the adjuvant combined with killed mycobacterium is generally called Freunds adjuvants (F.A.). In 1960 Dale reported first of the lymphatics proIiferation effect of F.A. in mice, but he did not elucidate whether such effect is due to the complete F.A. or to each of its components. This study was done to confirm the vascularization effect of F.A. and to determine if the effect is based upon the complete F.A. or upon its components. Fifty-five adult albino rabbits were injected respectively subcutaneously (ear), subserously (stomach) and intramuscularly (buttock) with O. 1 C.c. of complete F.A. and its components; and the site of each injection was examined for the subsequent period by simple inspection , tranillumination and biopsy. The results are as follows. 1) Complete F. A., when injected subcutaneously, produced marked proliferation of blood vessels both macroscopically and microscopically at the site of injection. Such effect of this agent reached its maximum peak on approximately one month after injection and lasted at least 3 months. 2) The oil fraction of the adjuvant (original F.A.) produced nearly the same degree of vascularization as the complete F.A. , whereas each component of the adjuvant showed no or little response. 3) It would appear therefore that the vascularization effect of F.A. is mainly due to its oil fraction and this is probably based on the synergy of paraffin-oil and lanolin 4) F.A. and its components , when injected subser ously, showed little vascularization, but not any at the site of intramusclar injection

원인에 있어서 자유로운 행위

학위논문(석사)--서울대학교 대학원 :법학과 형사법전공,1998.Maste

Decentralized Controller Design for Interconnected Linear parameter Varying(LPV) systems

Maste

(Der)Strafgrund der Teilnahme

학위논문(박사) --서울대학교 대학원 :법학과,2006.Docto

삼출성연령관련황반변성에서 유리체강내라니비주맙치료에 의한 시력 호전 정도와 흡연의 관계

학위논문 (석사)-- 서울대학교 대학원 : 임상의과학과, 2013. 2. 유형곤.Introduction: In this study, the risk factors that may influence visual improvement after intravitreal ranibizumab (IVR) treatment for exudative age-related macular degeneration (AMD) were examined. Patients and Methods: From April 2008 to February 2012, 420 patients (448 eyes) with exudative AMD were prospectively registered at Seoul National University Hospital. From this group of patients, 125 eyes were included in this study. All patients were treated with 3 consecutive IVR injections. The best-corrected visual acuity (VA) was evaluated at baseline and 1 month after the third ranibizumab injection. To evaluate the risk factors associated with VA improvement after IVR, patient demographic data and systemic risk factors were analyzed. Patients were divided into a nonresponder group and a responder group, with reference to the median visual improvement in all eyes. Results: Among 125 eyes, 66 eyes (52.8%) were included in the responder group and 59 eyes (47.2%) in the non-responder group. The median VA improvement after 3 monthly ranibizumab injections was -0.05 logMAR. Multivariate analyses revealed that current smoking (adjusted OR, 7.54095% CI, 1.732–32.823) was independently associated with poor VA improvement after IVR treatment for exudative AMD. Conclusion: Cigarette smoking is an independent risk factor for lower VA gains with IVR treatment for exudative AMD. Therefore, we believe that smoking cessation is important for a better visual outcome in AMD patients who are current smokers.I. Introduction 1 II. Materials and Methods 2 III. Results 5 IV. Discussion 13 V. Reference 17 국문 초록 21Maste

MOCVD를 이용한 실리콘(001) 기판 위에 고품위 GaP 및 InP 성장에 대한 연구

학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2015. 2. 윤의준.High-quality epitaxial growth of III-V on silicon substrates has been of great interest for many years due to because of the potential for monolithic integration of III-V based devices with Si metal-oxide semiconductor (MOS) integrated circuits and high performance and low power logic devices. Particularly, integration of III-V on Si can open up opportunities for new functionalities and multiple integration platforms, such as terahertz electronics, optoelectronics, integrating logic and communication platforms on the same Si wafer. In this dissertation, the epitaxial growth of InP layers on Si (001) substrates by selective area growth (SAG) has been studied in order to explore the potential applications as mentioned before. High quality InP layers were grown using a thin GaP buffer layer in SiNx trenches on Si (001) substrates. There are three main challenges for growth of high quality epitaxial layers. The first challenge is the high defect density in the epitaxial layers due to the large lattice mismatch between InP and the Si substrates. The second is the large difference in thermal expansion coefficient between InP and the Si substrates or SiNx mask in SAG. Last one is the generation of polar/non-polar interfaces between InP and Si substrates. The main focus of this work is to understand the defect formation mechanism as well as to develop solutions for defect reduction and to grow InP layers having extremely flat top surface for CMOS applications without CMP process. A thin GaP buffer layer is used as the intermediate layer between the InP and the Si substrates to alleviate the large lattice mismatch and to facilitate the InP nucleation. We find the optimized growth condition of GaP layers on exact Si (001) substrate through a multi-step MOCVD process to achieve such high quality GaP/Si (001) template substrates by planar method. We have investigated the generation process of low defects in GaP layers grown on Si substrates by FME. It was found that there were optimized growth conditions as growth temperature, V/III ratio and growth rate. RMS roughness is 2.8 nm from the optimized growth conditions. InP epilayers were grown on Si substrates using buffer layers of GaP. AFM, SEM and TEM examination results showed that GaP is a proper material as a buffer layer, and that its optimum thickness is about 3~5nm. TEM observation showed that the inserted InGaAs strained layers were very helpful to reduce the surface roughness and defect reduction. It also confirmed that GaP acted as a buffer to alleviate the lattice mismatch between InP and Si. The best AFM roughness obtained from inserted InGaAs strained layers was 2.1nm for 5ⅹ5 μm2. Next, we also propose a new scheme of SiNx mask for SAG process to grow InP layers with high quality and flat top surface by applying to mask with etched Si surfaces and rounded top shape SiNx. The extremely flat InP top surface is obtained by the optimized SiNx mask for SAG. In last part, we investigated SAG of InP layers on patterned Si substrates with InP/GaP buffer layers at various growth temperatures ranging from 500 °C to 650 °C. In order to grow high quality InP, a thin GaP buffer layer was grown on stepped sidewall surfaces of etched Si. The different growth temperature resulted in different top surfaces. The high quality InP layer with smooth surface can be attributed to the dislocation necking effect together with the formation of void. Finally we demonstrated the formation of InGaAs/InP heterostructures using the suggested InP templates, which can be used in applications of electronic devices.Contents Abstract I Contents V List of Tables IX List of Figures X Chapter 1. Introduction 1 1.1 Motivation 3 1.2 Si and III-V material properties 7 1.3 Thesis organization 11 2.4 References 13 Chapter 2. Growth and characterization of InP on Si 15 2.1 Chanllenges of InP growth on Si 16 2.1.1 Lattice mismatch 16 2.2.2 Thermal mismatch 18 2.3.3 Defects Associated to Polar on Non-Polar Epitaxy 19 2.2 Metalorganic Chemical Vapor Deposition (MOCVD) system 30 2.1.1 Overview 30 2.1.2 MOCVD system 32 2.3.3 Source Molecules 33 2.3.4 Principle of MOCVD 36 2.3 Characterizations 44 2.3.1 Nomarski DIC microscope 44 2.3.2 Field emission scanning electron microscopy (FE-SEM) 45 2.3.3 Transmission electron microscopy (TEM) 45 2.3.4 Atomic force microscopy (AFM) 46 2.3.5 High resolution X-ray diffractometry (HR-XRD) 46 2.4 References 47 Chapter 3 GaP blanket growth on Si (001) substrates 52 3.1 Introduction 53 3.2 Experimental details 58 3.3 Results and discussions 59 3.3.1 Optimization of LT GaP layers on Si 60 3.3.2 Optimization of HT GaP layers on Si 72 3.4 Summary 78 3.5 References 79 Chapter 4 Heteroepitaxial InP growth on Si(001)and Ge (001) substrates……………………………...81 4.1 Introduction 82 4.2 Experimental details 84 4.3 Results and discussions 86 4.3.1 Heteroepitaxial InP growth on Si(001) and Ge(001) substrates 86 4.3.2 Optimization of InP growth on Si using GaP buffer 99 4.4 Summary 101 4.5 references 102 Chapter 5 SAG of high quality InP on Si substrate using a GaP thin buffer layer 105 5.1 Introduction 106 5.2 Experimental details 108 5.3 Results and discussion 110 5.3.1 Effects on growth temperature on surface morphology 110 5.3.2 Defect formation mechanisms 121 5.4 Summary 129 5.5 References 131 Chapter 6 Conclusions 134 국문 초록 138 List of publication 142 감사의 글 146Docto

견실 모델예측제어기 설계에 관한 연구

Docto

Pleurotus ostreatus에서 Ca²+calmodulin 의존적 담백질 탈인산화 효소의 촉매 활성 단위체(calcineurin A) 유전자의 클로닝

학위논문(석사)--서울대학교 대학원 :미생물학과,1998.Maste