6 research outputs found

    μƒμ„±μ‹œν˜•λ‘ μ˜ μž¬κ²€ν† -Halle-Keyser μ‹œν˜•λ‘ μ„ μ€‘μ‹¬μœΌλ‘œ

    No full text
    문법(grammar)에 μ˜ν•΄μ„œ λ¬Έμž₯의 문법성(grammaticality)이 κ²°μ •λ˜λ“―μ΄ μ‹œμ— μžˆμ–΄μ„œλ„ μ‹œμ˜ κ·œμΉ™μ΄ μžˆμ–΄ μ‹œν–‰μ˜ μš΄μœ¨μ„±(metricality)을 νŒλ³„ν•΄ μ€€λ‹€. 졜근 10μ—¬λ…„κ°„ μ‹œμ˜ κΈ°λ³Έμ‹œν˜•μ„ κ΅¬λΆ„ν•˜μ—¬ 각 葌의 μœ„μΉ˜(position) (ν˜Ήμ€ 음보(foot))와 μŒμ ˆκ°„μ˜ κ°€λŠ₯ν•œ 결합을 κΈ°μˆ ν•˜λ €λŠ” μ‹œν˜•λ‘ μžλ“€μ˜ λ…Έλ ₯은 이 μš΄μœ¨κ·œμΉ™(metrical rule)의 λ°œκ²¬μ„ μœ„ν•΄μ„œμ˜€λ‹€. 그듀은 μ •μƒν˜•(norm)에 λ‹¨μˆœνžˆ ν—ˆμš©μ΄νƒˆν˜•(allowable deviations)의 λͺ©λ‘μ„ μ²¨κ°€ν•œ μ „ν†΅μ΄λ‘ μ΄λ‚˜ μ‹œμ˜λ‚­λ…(performance)에 κ·Όκ±°λ₯Ό λ‘” ꡬ쑰주의 μ‹œν˜•λ‘ μžλ“€μ˜ μ£Όμž₯에 λ°˜λŒ€ν•œλ‹€. κ·Έλ“€μ—κ²Œ μ „μžλŠ” 일반적인 원칙이 μ—†λŠ” ad hocν•œ λͺ©λ‘μ˜ λ‚˜μ—΄λ‘œ λ³΄μ˜€κ³  ν›„μžλŠ” 낭독에 λ‚΄μž¬ν•˜λŠ” μ‹œν–‰μ˜ 좔상성을 νŒŒμ•…ν•˜μ§€ λͺ»ν•˜λŠ” μ‹œν–‰λ‘ μ΄μ—ˆλ‹€. 특히 ꡬ쑰주의 μ‹œν˜•λ‘ μ—μ„œλŠ” μ•„λž˜μ˜ (1)λΏλ§Œμ•„λ‹ˆλΌ (2) κΉŒμ§€ legitimate shifting of the accent for the sake of the meter에 μ˜ν•΄ μ˜¬λ°”λ₯Έ μ‹œν–‰(正葌)으둜 λ§Œλ“€μ–΄ λ²„λ¦¬λ―€λ‘œ μš΄μœ¨κ·œμΉ™μ˜ μ‘΄μž¬κ°€ λ¬΄μ˜λ―Έν•˜κ²Œ λ˜μ–΄λ²„λ¦°λ‹€

    Graphene Growth and Optimizing Etching Process of SiC Substrates

    No full text
    MasterGraphene, which consists of a single atomic layer of carbon atoms, has been attracting great attention as a base material for next-generation electronic devices. It is essential to grow highquality graphene in a large area in order to realize graphene-based electronic devices for mass production. One of the methods is to grow graphene from a single crystalline 4H SiC(0001) substrate, which is known as a method for large-scale growth. In this method we can get graphene in a large area. Also, because of a wide band gap of SiC, graphene doesn`t have to be transferred to other substrates like SiO2
    corecore