Graphene Growth and Optimizing Etching Process of SiC Substrates
- Publication date
- Publisher
- 포항공과대학교
Abstract
MasterGraphene, which consists of a single atomic layer of carbon atoms, has been attracting great
attention as a base material for next-generation electronic devices. It is essential to grow highquality
graphene in a large area in order to realize graphene-based electronic devices for mass
production. One of the methods is to grow graphene from a single crystalline 4H SiC(0001)
substrate, which is known as a method for large-scale growth. In this method we can get
graphene in a large area. Also, because of a wide band gap of SiC, graphene doesn`t have to
be transferred to other substrates like SiO2