8 research outputs found

    光电子材料InP与金属接触的物理特性研究

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    讨论了InP与金属接触时的电荷输运方式;给出了n型InP材料掺杂浓度为(1×10~(15) ~1×10~(17)) cm~(-3)时电子输运(以热电子发射为主)的数学表达式; 测量了国产InP单晶与一些金属的接触势垒;分析了“金属—n~+-InP”结构,得到了n~+区厚度和势垒高度间的关系。理论结果与实验符合,表明采用该结构,可得到一个势垒极低的金属与InP电极的欧姆接触

    光电子材料InP玷污的研究

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    文章给出了光电子材料InP的(100)和(111)晶面质谱分析的结果,对(100)晶面做了光荧光分析。在300和77 K温度下测量了(100)晶面的电子浓度及电子迁移率。研究表明玷污主要来自硅

    Measurement of integrated luminosity of data collected at 3.773 GeV by BESIII from 2021 to 2024*

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    Amplitude analysis of the decays D0π+ππ+πD^0\rightarrow\pi^+\pi^-\pi^+\pi^- and D0π+ππ0π0D^0\rightarrow\pi^+\pi^-\pi^0\pi0

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    Determination of the number of ψ(3686) events taken at BESIII

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    The number of ψ(3686) events collected by the BESIII detector during the 2021 run period is determined to be (2259.3±11.1)×106 by counting inclusive ψ(3686) hadronic events. The uncertainty is systematic and the statistical uncertainty is negligible. Meanwhile, the numbers of ψ(3686) events collected during the 2009 and 2012 run periods are updated to be (107.7±0.6)×106 and (345.4±2.6)×106, respectively. Both numbers are consistent with the previous measurements within one standard deviation. The total number of ψ(3686) events in the three data samples is (2712.4±14.3)×10^
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