The Application of Polyimide(PI) in the Manufacture Process of RF MEMS Capacitive Shunt Switch

聚酰亚胺树脂(PI)因其良好的平面化特性、在氧气中易灰化、不完全固化易溶解于碱性显影液、在CHF3等离子气氛中有较强的抗蚀性等性质,在电容RFMEMS开关的制作过程中,应用它作为刻蚀保护层和牺牲层,不但可以使工艺过程得到简化,而且可以对开关的介质层尺寸、牺牲层厚度等图形参数起到很好的控制作用.As a kind of polymer material, polyimide(PI) holds a favorable complanation property and is easy to become ash in the oxygen.PI also can resist ion etching produced by the CHF_3 plasma body and be easy to dissolve in alkali developer solution when it is not solidified completely.Basised on the properties mentioned above,PI can be used in the manufacture process of RF MEMS Capacitive Shunt Switch to achieve a precisely control on the size of dielectric layer,the thickness of sacrificial layer and some other graph parameters

Application of Si/Glass Bonding in the Facture of RF-MEMS Switches

介绍了一种新的RF-MEMS开关制作工艺,利用静电键合技术将表面微加工工艺与体硅加工工艺结合在一起完成开关上下电极的组合;说明了如何在普通环境下进行图形对准;通过静电力的理论计算和键合试验,分析了铝台阶对硅/玻璃静电键合的影响,得出铝台阶厚度低于100nm时键合效果较好;对有无铝台阶时的静电键合电流特性进行比较,分析了硅/玻璃界面电荷分布及其运动情况,为RF-MEMS开关的设计与制作提供了有意义的参考。Bulk micromachining processes and surface sacrificial processes were connected by Si/glass bonding for making RF-MEMS switches.How to align the mask at nomal condition was given.The theoretical calculations of the static force and lots of bonding experiments were done to prove the influence of Al in the Si/glass bonding,educing that better results of Al thickness below 100 nm.The current characteristic was compared in the electrostatic bonding with Al or not.The charge distribution and movement in the interface of silicon wafer and glass wafer was analyzed.Significant reference was provided for the design and manufacture of RF-MEMS switches.国家自然科学基金项目(60301006);; 福建省科技重点项目资助(2005H029