基于230 MHz电力频段的专用LTE射频芯片的设计

本文针对传统电路采用器件分立技术有占据空间大、成本高的问题,定制开发了电力专用射频芯片。着重介绍了射频芯片的设计方法,列举了开发使用的关键技术。该芯片内部集成射频和数字信号处理部分以及MCU,与目前市面上的芯片相比,具有集成度高、固件加固、支持自动化测试等优势。此芯片性能、功耗均达到了产业化的要求。烟台科技项目编号：5206051400K9; 潍坊科技项目编号是：5206041400T

魁蚶(Scapharca broughtonii)热休克蛋白90(HSP90)基因的克隆及转录表达分析

热休克蛋白90(HSP90)作为一种研究的常规免疫基因,在许多物种都有过报道。本研究从构建的魁蚶转录组文库中筛选得到的HSP90基因部分序列为基础,通过RACE技术获得其c DNA全长序列(命名为Sb HSP90),以期明确魁蚶HSP90基因的结构特征、组织分布及其对病原菌刺激的免疫变化规律。序列和结构分析表明,该c DNA全长2707bp,编码一个由728个氨基酸组成的多肽,该多肽含有HSP90家族共有的5个签名序列,C端高度保守的MEEVD短肽序列和ATPase结构域;预测蛋白的分子量(Mw)为83.72k Da,理论等电点(p I)为4.85;预测该蛋白无信号肽,具有4个糖基化位点。同源性及系统分析表明,Sb HSP90基因与软体动物的HSP90相似性达到83%以上,其中与长牡蛎(Crassostrea gigas)和海湾扇贝(Argopecten irradians)相似度最高达86%,与甲壳动物HSP90的相似度都在81%左右,与脊椎动物HSP90-α和HSP90-β的同源性都很接近。实时荧光定量PCR(q RT-PCR)结果表明:Sb HSP90 m RNA在魁蚶血细胞、斧足、鳃、外套膜、闭壳肌和肝胰腺和中均有表达,斧足中的表达量相对较高,而在肝胰腺中的表达量则相对较低;注射鳗弧菌后,相对于对照组,Sb HSP90基因在所检测的每个组织中m RNA水平上的表达量都显著上调(P<0.01),而且具有显著的时间依赖性和瞬时表达趋势。国家自然科学基金项目,31602142号;;中国水产科学研究院基本科研业务费项目,2017GH07号;;浙江省重中之重学科开放基金,KF2015007

激光沉积成形增材制造技术

本书基于作者近20年的研究成果，主要对激光熔化沉积技术的工艺、形性调控、软件及装备等相关内容进行研究和论述。主要包括激光沉积组织凝固理论基础、主要工艺及核心设备、专用软件系统、工艺开发及优化方法、过程仿真、过程检测、精度和质量控制方法及无损检测等内容。本书适合作为高等学校增材专业、机械专业学生，以及增材制造/修复技术相关领域研究人员的参考用书

基于势能原理的铰接支撑齿条-齿轮时变啮合刚度解析计算

齿轮齿条传动是一种重要的机械传动方式，其内部时变啮合刚度是一种主要的激励源，对系统振动噪声水平有着重要影响。针对齿轮齿条时变啮合刚度高效、准确的解析计算问题，提出了一种基于势能原理的铰接支撑齿条与齿轮啮合刚度解析计算方法，计算获得了不同参数下的齿轮齿条时变啮合刚度，并利用有限元法验证了建立的解析计算模型的正确性。同时，利用建立的解析计算方法分析了垂向间隙、压力角、齿条长度等参数对齿轮齿条时变啮合刚度的影响规律。结果表明，建立的解析计算方法能够准确计算齿轮齿条时变啮合刚度，为齿轮齿条传动系统动态特性分析提供了理论支撑

以纳微颗粒为佐剂的新型乙肝疫苗研发

乙型肝炎是乙肝病毒(HBV)感染引起的传染性疾病,感染的慢性化往往导致肝硬化和肝癌,严重威胁人类的健康。目前尚没有治愈乙肝的有效药物,接种疫苗仍然是预防HBV感染的有效方法。基因重组的乙肝疫苗的安全性得到改善,但其免疫原性和稳定性降低,需要添加佐剂才能诱导有效的免疫应答。铝盐佐剂是目前人用疫苗的主

GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy

We demonstrate nearly 1 eV GaN0.03As0.97/In0.09Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photoluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As superlattice solar cells show a reasonably-high short-circuit current density (J(sc)) of over 10 mA/cm(2). Furthermore, a concentration behavior is measured, which shows a linear relationship between J(sc) and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes

Structural Dependences of Localization and Recombination of Photogenerated Carriers in the top GaInP Subcells of GaInP/GaAs Double-Junction Tandem Solar Cells

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2 degrees (denoted as Sample 2 degrees) and 7 degrees (Sample 7 degrees) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2 degrees, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7 degrees, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices