神经记录用硅基多通道微电极探针的设计与制造

为了从中枢神经系统记录电信号，半导体加工技术已经被用于微电极探针的制造．介绍了一种硅基探针的设计和制造工艺流程．我们已经制造出15 μm厚，3 mn长,100μm宽的记录用探针，每根探针含有7个记录点，间隔120 μm.在制造过程中使用微机械系统(MEMS)工艺中常用的硅表面微加工工艺:等离子增强化学气相淀积(PECVD)，感应耦合等离子刻蚀(ICP)以及硅的各向异性刻蚀等．测试结果给出了探针的强度和阻抗特性

用于神经电信号记录的多通道微探针

以体硅为衬底，采用微机械加工技术(MEMS)制作了七通道的可植入到脑皮层的微探针，用于记录神经电信号．从生物相容性、减小植入损伤、工艺制作难度等方面考虑，制作了以二氧化硅／硅(SiO_2／Si)为主体的微探针，并详述了其具体制作工艺流程．扫描电镜(SEM)照片显示微探针针长3 mm、针宽100 μm、针厚约为20μm，各个记录点直径10μm、间距120μm，实现了各通道之间良好的信号隔离．微探针距离针尖1 mm范围内的针宽以一定弧度由100μm逐渐变窄，同时针尖锥角为6°，此种结构有利于减小植入时对脑组织的损伤．通过体外测试得到，当频率由10 kHz增加到10 MHz时，微电极各个通道阻抗由150.5 kΩ降低到6.0 kΩ

Effects of Lithium Salts on the Properties of Hyperbrandched/Comb-like Composite Polymer Electrolytes

利用PVA侧链上的羟基的化学活性, 采用超支化聚胺-酯对改性纳米SiO2和PVA接枝改性, 并加入不同锂盐，制备了SiO2-g-HBPAE/PVA-g-HBPAE超支化/梳状复合型聚合物电解质, 利用SEM观察了纳米粒子在基体中的分散情况, 采用DSC、拉伸实验以及介电谱研究了锂盐种类及添加量对复合体系性能的影响. 结果表明, 超支化接枝改善了SiO2和基体的界面相容性; 磺酸类锂盐在复合材料中表现出自增塑现象, 材料的玻璃化转变温度(Tg)大幅度下降; LiClO4在基体中的离解能力强于LiCF3SO3和 LiN(SO3CF3)2; 当LiCF3SO3添加量为20 %(by mass, 下文同)时, 聚合物电解质的室温电导率达到最大值2.58×10-6 S•cm-1.Based on the chemical characteristics of the hydroxyl group of PVA side-chain, the hyperbrandched poly(amine-ester) (HBPAE) was used to hypergraftingly pretreated nano-silica (SiO2) and polyving akohol (PVA). And different lithium salts were added to fabricate the SiO2-g-HBPAE/PVA-g-HBPAE hyperbrandched/comb-like composite polymer electrolytes (CPEs). The dispersion of nanoparticles in matrix was observed by SEM. The effects of different lithium salts on the properties of CPEs were studied by DSC, tensile test and dielectric spectra. The results showed that the hypergrafting method improved the interphase compatibility between SiO2 and matrix. Sulfonic acid type lithium salts accelerated self-plasticizing with the Tg values being decreased. The LiClO4 manifested stronger solubility than LiCF3SO3 and LiN(SO3CF3)2 in the polymer matrices. The ionic conductivity of the polymer electrolytes reached the maximum value of 2.58×10-6 S·cm-1 after the addition of 20% LiCF3SO3 at room temperature.国家自然科学基金项目（No. 51473186）和广州市科技计划项目（No. 201508010052）资助作者联系地址：1. 中山大学化学与化学工程学院, 广东广州, 510275; 2. 广州天赐高新材料股份有限公司, 广东广州, 510760Author's Address: 1.School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275,China; 2. Guangzhou Tinci Materials Technology Co., Ltd., Guangzhou 510600, China通讯作者E-mail：[email protected]