7 research outputs found

    高兼容性超低弯曲损耗单模光纤的制备与表征

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    介绍了一种新型非光子晶体结构弯曲不敏感单模光纤的设计与制备。采用数值计算方法分析了光纤的下陷型波导结构,通过PCVD(等离子体化学气相沉积法)工艺获得了1 310nm波长的模场直径为4.3μm、1 550nm波长的模场直径为5.4μm的光纤样品,与G.652D光纤的双点接续损耗低至0.15dB,满足普通跳线的接续要求。该样品在2.5mm弯曲半径条件下弯曲10圈,其1 550nm波长的弯曲损耗优化至0.01dB,可适用于任何苛刻的FTTx应用环境,并有替代铜缆成为消费电子中理想传输介质的潜力,同时还可用于各种光电器件中

    400Gbit/s高速大容量光通信系统单模光纤设计与制备

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    介绍了一种大有效面积单模光纤的数值设计分析与PCVD(等离子体化学气相沉积)制备工艺,该光纤的有效面积达到133μm2,同时在1 550nm处衰减系数优化到0.183dB/km,弯曲损耗优化至0.45dB/圈(弯曲半径7.5 mm)。在双偏振DFT-S CO-OFDM 4QAM/16QAM(4进制/16进制正交振幅调制的离散傅里叶变换扩展相干光正交频分复用)调制信号下,对该光纤在100Gbit/s和400Gbit/s系统的误码率和Q值等传输性能进行了验证。结果表明,该光纤能有效改善最佳入纤功率和非线性效应,可使传输距离提升30%,能有效优化400Gbit/s传输系统,并且在FTTx领域有着广泛的应用前景

    Amplitude analysis of the decays D0π+ππ+πD^0\rightarrow\pi^+\pi^-\pi^+\pi^- and D0π+ππ0π0D^0\rightarrow\pi^+\pi^-\pi^0\pi0

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    Measurement of integrated luminosity of data collected at 3.773 GeV by BESIII from 2021 to 2024*

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    Determination of the number of ψ(3686) events taken at BESIII

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    The number of ψ(3686) events collected by the BESIII detector during the 2021 run period is determined to be (2259.3±11.1)×106 by counting inclusive ψ(3686) hadronic events. The uncertainty is systematic and the statistical uncertainty is negligible. Meanwhile, the numbers of ψ(3686) events collected during the 2009 and 2012 run periods are updated to be (107.7±0.6)×106 and (345.4±2.6)×106, respectively. Both numbers are consistent with the previous measurements within one standard deviation. The total number of ψ(3686) events in the three data samples is (2712.4±14.3)×10^
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