Probing the edge-related properties of atomically thin MoS2 at nanoscale

层状二维材料具有独特的物理化学性质，使其在光电器件、传感、能源和催化等领域得到了高度关注和广泛应用。二维材料在制备过程中不可避免引入结构缺陷，虽然这些缺陷尺度仅为数纳米甚至单原子，但是会极大地改变材料的结构和电子性质，从而影响其应用。化学化工学院任斌教授课题组在层状二维材料缺陷表征方面取得进展。该工作表明了TERS在原位、高空间分辨表征缺陷位的结构和电子性质方面具有独特的优势，可以进一步推广到其他二维材料，从而有效地指导缺陷设计和材料应用。 该工作通过校内外课题组紧密合作，在任斌教授、谭平恒研究员（中科院半导体研究所）和王翔博士共同指导下完成。实验部分主要由黄腾翔博士（第一作者，已毕业化学系博士生）完成，电子能带结构与光谱理论计算由谭平恒研究员课题组从鑫博士生（共同第一作者）完成，吴思思、林楷强、姚旭、何玉韩、吴江滨、包一凡、黄声超等参与了实验与讨论。【Abstract】Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tipenhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS2, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edgeinduced Raman peak (396 cm−1) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm−1. The power of TERS demonstrated in MoS2 can also be extended to other 2D materials, which may guide the defect engineering for desired properties.The authors acknowledge the final supports from MOST of China (2016YFA0200601 and 2016YFA0301204), NSFC (21633005, 21790354, 21503181, 21711530704, 21621091, 11874350, 11474277, and 11434010), Natural Science Foundation of Fujian Province (2016J05046), and China Postdoctoral Science Foundation (2017M622062). 研究工作得到科技部、国家自然科学基金委员会、福建省自然科学基金和中国博士后基金资助

Determination of the number of ψ(3686) events taken at BESIII

The number of ψ(3686) events collected by the BESIII detector during the 2021 run period is determined to be (2259.3±11.1)×106 by counting inclusive ψ(3686) hadronic events. The uncertainty is systematic and the statistical uncertainty is negligible. Meanwhile, the numbers of ψ(3686) events collected during the 2009 and 2012 run periods are updated to be (107.7±0.6)×106 and (345.4±2.6)×106, respectively. Both numbers are consistent with the previous measurements within one standard deviation. The total number of ψ(3686) events in the three data samples is (2712.4±14.3)×10^