The preparation of Au/n-4H-SIC (MS) schottky diodes and the investigation their electrical characteristicsas function of frequency

Bu çalışmada, Au/n-4HSiC (MS) Schottky engel diyotları hazırlandı ve bunların temel elektriksel karekteristikleri oda sıcaklığında frekansa bağlı kapasitans/iletkenlik-voltaj (C-V ve G/w-V) verileri kullanılarak incelendi. Katkılanan verici atomların (ND) yoğunluğu, Fermi enerji seviyesi (EF), ve potansiyel engel (?b(C-V)) yüksekliği değerleri geniş bir frekans aralığında (0,7 kHz-1MHz) ölçülen ters gerilimdeki C-2-V eğrilerinden elde edildi. Hem C hem de G/w değerleri oldukça frekansa bağlı olup artan frekansla üstel olarak azalmaktadır. C ve G/w değerlerinde özellikle tüketim bölgesindeki bu değişiklikler, metal yarıiletken arasında yerleşmiş olan arayüzey durumlarının (Nss) varlığına atfedildi. Seri direnç (Rs)-logf grafiği, C ve G/w değerleri kullanılarak elde edildi ve artan frekansla azaldığı gözlendi. Yüksek-düşük frekans kapasitans (CHF-CLF)değerleri kullanılarak elde edilen Nss-V grafiğinde bir pik gözlendi. Özellikle yüksek frekanslardaki C-V eğrilerinde ileri voltajlarda gözlenen bükülme Rs değerine atfedildi.In this study, Au/n-type 4H-SiC Schottky diodes were fabricated and their main electrical characteristics have been investigated as function of frequency by using the capacitance/conductance-voltage (C-V and G/w-V) measurements at room temperature. The doping density of donor atoms (ND), Fermi energy level (EF), and barrier height (?b(C-V)) values were obtained from the reverse bias C-2-V plots in the wide frequency range of 0,7 kHz-1MHz. Both C and G/w values were found as strongly function of frequency and decrease with increasing frequency as almost exponential. The changes in C and G/w values in depletion region were attributed to the particular density distribution of surface states (Nss) between metal and semiconductor. The series resistance (Rs)-logf plots were also obtained by using the C and G/w data and decreases with increasing frequency. The voltage dependent of Nss was also obtained from high-low frequency capacitance (CHF-CLF) method and shows a peak. Especially the concave curvature in high frequency C-V plots for forward biases was attributed to the value of Rs

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

© 2021 TUBITAK. All rights reserved.The Al/Mg2 Si/p-Si Schottky diode was fabricated using spin coating. The real (ε ′) and imaginary (ε ′ ′) components of complex dielectric (ε*), the real (M′) and imaginary (M′ ′) components of complex electric modulus (M*) and AC electrical conductivity (σ AC ) of the fabricated Al/Mg2 Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz. The ε ′ and ε ′ ′ were obtained using the value of measured capacitance and conductance while the values of dielectric loss tangent (tanδ, M′, M′ ′ and σ AC were obtained using the value of ε ′ and ε ′ ′. While the values of ε ′, ε ′ ′ and tanδ are almost independent of the frequency in the inversion and accumulation region, their value changes with the frequency, especially in the depletion region. The σAC was examined depending on the frequency and it was seen that its value increased with increasing frequency especially in depletion and accumulation region. The experimental results showed that the Mg2 Si can be used instead of conventionally used dielectric materials (SnO2, SiO2)

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current–voltage (I–V) characteristics in a temperature range of 60-340 K at (± 3 V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦB0) determined from the linear-part of semi-logarithmic forward bias IF–VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦB0 and increase in n with decreasing temperature. Additionally, Richardson constant (A*) value was very found close to its theoretical value. The values of ΦB0 and n changed from 0.173 eV to 0.837 eV and 16.60 to 2.85 with increasing temperature from 60 to 340 K. The ΦB0 relationship with temperature is disagreement with the negative temperature coefficient of the bandgap of Si for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec–Ess) profile was also obtained from IF–VF data for each temperature

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

The Ag/Mg3N2/p-Si heterojunction diode (HD) with rectifier contacts (RCs) with the same area in various geometries were fabricated through thermal evaporation, and the electrical performances of these diodes was compared. The geometry of the RC was found to affect various electrical properties such as ideality factor, saturation current and barrier height of HD, the rectifier rate, and the leakage current of the diodes. The experimental demonstrated the HD with a circular RC exhibited a higher rectifying ratio and lower leakage current compared to the other RCs. Hence, the design and optimization of the RC play a critical role in achieving the desired electrical properties of diode. These diodes, featuring an Mg3N2 interfacial layer and showcasing photoconductive behavior, can be utilized as photodiodes in various optoelectronic devices