Size-dependence of Strong-Coupling Between Nanomagnets and Photonic Cavities

The coherent dynamics of a coupled photonic cavity and a nanomagnet is explored as a function of nanomagnet size. For sufficiently strong coupling eigenstates involving highly entangled photon and spin states are found, which can be combined to create coherent states. As the size of the nanomagnet increases its coupling to the photonic mode also monotonically increases, as well as the number of photon and spin states involved in the system's eigenstates. For small nanomagnets the crystalline anisotropy of the magnet strongly localized the eigenstates in photon and spin number, quenching the potential for coherent states. For a sufficiently large nanomagnet the macrospin approximation breaks down and different domains of the nanomagnet may couple separately to the photonic mode. Thus the optimal nanomagnet size is just below the threshold for failure of the macrospin approximation.Comment: 10 pages, 7 figure

Phonitons as a sound-based analogue of cavity quantum electrodynamics

A quantum mechanical superposition of a long-lived, localized phonon and a matter excitation is described. We identify a realization in strained silicon: a low-lying donor transition (P or Li) driven solely by acoustic phonons at wavelengths where high-Q phonon cavities can be built. This phonon-matter resonance is shown to enter the strongly coupled regime where the "vacuum" Rabi frequency exceeds the spontaneous phonon emission into non-cavity modes, phonon leakage from the cavity, and phonon anharmonicity and scattering. We introduce a micropillar distributed Bragg reflector Si/Ge cavity, where Q=10^5-10^6 and mode volumes V<=25*lambda^3 are reachable. These results indicate that single or many-body devices based on these systems are experimentally realizable.Comment: Published PRL version. Note that the previous arXiv version has more commentary, figures, etc. Also see http://research.tahan.com

Quantum properties of dichroic silicon vacancies in silicon carbide

The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or light-matter interfaces, the search for an ideal defect with multi-functional ability remains open. In this spirit, we investigate here the optical and spin properties of the V1 defect centre, one of the silicon vacancy defects in the 4H polytype of silicon carbide (SiC). The V1 centre in 4H-SiC features two well-distinguishable sharp optical transitions and a unique S=3/2 electronic spin, which holds promise to implement a robust spin-photon interface. Here, we investigate the V1 defect at low temperatures using optical excitation and magnetic resonance techniques. The measurements, which are performed on ensemble, as well as on single centres, prove that this centre combines coherent optical emission, with up to 40% of the radiation emitted into the zero-phonon line (ZPL), a strong optical spin signal and long spin coherence time. These results single out the V1 defect in SiC as a promising system for spin-based quantum technologies

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.Comment: 9 pages, 6 figures; Supplementary Informatio

Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires

We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct mechanisms: (A) Change in wave function symmetry, where within the direct bandgap regime, strain changes the symmetry of wave functions, which in turn leads to a large change of optical dipole matrix element. (B) Direct to indirect bandgap transition which makes the spontaneous photon emission to be of a slow second order process mediated by phonons. This feature uniquely occurs in silicon nanowires while in bulk silicon there is no change of optical properties under any reasonable amount of strain. These results promise new applications of silicon nanowires as optoelectronic devices including a mechanism for lasing. Our results are verifiable using existing experimental techniques of applying strain to nanowires