215 research outputs found

    Macrospin and micromagnetic studies of tilted polarizer spin-torque nano-oscillators

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    Using nonlinear dynamical systems theory, we analytically studied a spin-torque device in which the magnetization of the polarizer (the fixed layer) is tilted at an arbitrary angle out of the thin-film plane. While the analytical theory can determine the major features of the system, macrospin simulations were employed to demonstrate the unique characteristics of the system, such as the hysteretic switching between bistable states. Material dependencies of the dynamic and static state diagrams were also studied in the framework of the macrospin model. Full-scale micromagnetics simulations were finally performed to reveal more subtle features of the dynamics of such tilted polarizer systems. Both the macrospin and micromagnetics simulations gave quantitatively the same results as our analytical theory. © 2012 American Institute of Physics.published_or_final_versio

    Direct observation of magnetization dynamics generated by nano-contact spin-torque vortex oscillators

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    Time-resolved scanning Kerr microscopy has been used to directly image the magnetization dynamics of nano-contact (NC) spin-torque vortex oscillators (STVOs) when phase-locked to an injected microwave (RF) current. The Kerr images reveal free layer magnetization dynamics that extend outside the NC footprint, where they cannot be detected electrically, but which are crucial to phase-lock STVOs that share common magnetic layers. For a single NC, dynamics were observed not only when the STVO frequency was fully locked to that of the RF current, but also for a partially locked state characterized by periodic changes in the core trajectory at the RF frequency. For a pair of NCs, images reveal the spatial character of dynamics that electrical measurements show to have enhanced amplitude and reduced linewidth. Insight gained from these images may improve understanding of the conditions required for mutual phase-locking of multiple STVOs, and hence enhanced microwave power emission.Comment: 10 pages, 3 figure

    Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

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    Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.Comment: 4pgs, 3 fig

    Zero Field precession and hysteretic threshold currents in spin torque oscillators with tilted polarizer

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    Using non-linear system theory and numerical simulations we map out the static and dynamic phase diagram in zero applied field of a spin torque oscillator with a tilted polarizer (TP-STO).We find that for sufficiently large currents, even very small tilt angles (beta>1 degree) will lead to steady free layer precession in zero field. Within a rather large range of tilt angles, 1 degree< beta <19 degree, we find coexisting static states and hysteretic switching between these using only current. In a more narrow window (1 degree<beta<5 degree) one of the static states turns into a limit cycle (precession). The coexistence of static and dynamic states in zero magnetic field is unique to the tilted polarizer and leads to large hysteresis in the upper and lower threshold currents for TP-STO operation.Comment: 5 pages, 4 figure

    Pinholes May Mimic Tunneling

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    Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas over which the thickness of the insulator goes to zero so that the upper and lower metals of the trilayer make direct contact). Recently, we have presented experimental evidence that ferromagnet-insulator-normal trilayers that appear from current-voltage plots to be pinhole-free may nonetheless in some cases harbor pinholes. Here, we show how pinholes may arise in a simple but realistic model of film deposition and that purely classical conduction through pinholes may mimic one aspect of tunneling, the exponential decay in current with insulating thickness.Comment: 9 pages, 3 figures, plain TeX; submitted to Journal of Applied Physic
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