4-Channel C-band WDM transmitter based on 10 GHz graphene-silicon electro-absorption modulators

We demonstrate three 4-channelWDMtransmitters, each based on four graphenesilicon electro-absorption modulators with passivated graphene, achieving similar to 2.6dB insertion loss, similar to 5.5dB extinction ratio for 8V voltage swing and similar to 10GHz 3dB-bandwidth at 0V DC bias

The effect of the alcohol content on the solubility of amino acids in aqueous solutions

The solubility of me most simple a-amino acid, glycine, was measured in the temperature range between 25 and 60°C for the aqueous system of ethanol and at 25 °C for the aqueous system 0V 1-propanol. Theoretical work was essentially focused on the application of the excess solubility approach with conventional thermodynamic models such as the Margules and Wilson equations. The simple three suffix Margules model, with only one parameter to be estimated, gave the best results, with an average absolute deviation of 3.8%

A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C

This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from –70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim

Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics

First Measurement of the Photon Structure Function F_2,c^gamma

The first measurement of F_2,c^gamma is presented. At low x the measurement indicates a non-zero hadron-like component to F_2,c^gamma. At large x the measurement constitutes a test of perturbative QCD at next-to-leading order, with only m_c and alpha_s as free parameters, with a precision of O(40%).Comment: 6 pages, 6 figures, Invited talk given at the PHOTON 2000 Conference, Ambleside, UK, August 26-31, 2000, to appear in the Proceeding